Mo-capped Al-Nd alloy for both gate and data bus lines of liquid crystal displays

Thin Solid Films

Volumn 383, Issue 1-2, 2001, Pages 287-291

  Arai, Toshiaki ^a   Makita, Atsuya ^a   Hiromasu, Yasunobu ^a   Takatsuji, Hiroshi ^a  

^a IBM JAPAN LTD   (Japan)

Author keywords

Aluminum; Capped structure; Hillock; Neodymium

Indexed keywords

ADDITION REACTIONS; ALUMINUM ALLOYS; ANNEALING; HEAT RESISTANCE; INTERFACES (MATERIALS); LIQUID CRYSTAL DISPLAYS; MOLYBDENUM; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; HILLOCK;

THIN FILM TRANSISTORS;

EID: 0035246787     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01794-6     Document Type: Article

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