Elemental distribution and thermoelectric properties of layered tellurides 39R-M 0.067Sb 0.667Te 0.266 (M=Ge, Sn)

Chemistry - A European Journal

Volumn 18, Issue 4, 2012, Pages 1209-1218

  Schneider, Matthias N ^a   Fahrnbauer, Felix ^a   Rosenthal, Tobias ^a   Döblinger, Markus ^a   Stiewe, Christian ^b   Oeckler, Oliver ^a  

^a UNIVERSITY OF MUNICH   (Germany)

^b GERMAN AEROSPACE CENTER DLR   (Germany)

Author keywords

electron microscopy; layered compounds; solid state chemistry; tellurium; X ray diffraction

Indexed keywords

ABSOLUTE VALUES; ATOM POSITIONS; BULK SAMPLES; CONCENTRATION GRADIENTS; ELECTRICAL CONDUCTIVITY; ELEMENTAL CONCENTRATIONS; ELEMENTAL DISTRIBUTION; HAADF-STEM; INTER-ATOMIC DISTANCES; ISOSTRUCTURAL; LAYER BY LAYER DEPOSITION; LAYERED COMPOUND; MODERATE TEMPERATURE; P-TYPE; PURE ELEMENTS; RESONANT X-RAY SCATTERING; SCATTERING CONTRAST; SEMICONDUCTOR HETEROSTRUCTURES; SINGLE-CRYSTAL DIFFRACTION; SN-DOPED; SOLID STATE CHEMISTRY; STACKING DISORDERS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES; Z-CONTRAST SCANNING;

ANTIMONY; ARSENIC; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPY; ELECTRONS; GERMANIUM; METASTABLE PHASES; NANOCOMPOSITES; SCATTERING; SEMICONDUCTING TELLURIUM; SUPERLATTICES; SYNCHROTRON RADIATION; TELLURIUM; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; TIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ANTIMONY COMPOUNDS;

EID: 84855918296     PISSN: 09476539     EISSN: 15213765     Source Type: Journal    
DOI: 10.1002/chem.201102331     Document Type: Article

References (62)

1. D. Bonnet, P. Meyers, J. Mater. Res. 1998, 13, 2740-2753.
2. M. A. Green, J. Mater. Sci. Mater. Electron. 2007, 18, 15.
3. D. Lencer, M. Salinga, M. Wuttig, Adv. Mater. 2011, 23, 2030-2058.
4. S. Raoux, W. Wojciech, D. Ielmini, Chem. Rev. 2010, 110, 240-267.
5. W. Bensch, M. Wuttig, Chem. Unserer Zeit 2010, 44, 92-107.
6. A. V. Shevelkov, Russ. Chem. Rev. 2008, 77, 1-19.
7. J. R. Sootsman, D. Y. Chung, M. G. Kanatzidis, Angew. Chem. 2009, 121, 8768-8792
8. Angew. Chem. Int. Ed. 2009, 48, 8616-8639.
9. G. J. Snyder, E. S. Toberer, Nat. Mater. 2008, 7, 105-114.
10. D. L. Medlin, G. J. Snyder, Curr. Opin. Colloid Interface Sci. 2009, 14, 226-235.
11. M. S. Dresselhaus, G. Chen, M. Y. Tang, R. Yang, H. Lee, D. Wang, Z. Ren, J.-P. Fleurial, P. Gogna, Adv. Mater. 2007, 19, 1043-1053.
12. M. G. Kanatzidis, Chem. Mater. 2010, 22, 648-659.
13. Č. Drašar, A. Hovorková, P. LošÅ ák, H. Kong, C.-P. Li, C. Uher, J. Appl. Phys. 2008, 104, 023701.
14. R. Venkatasubramanian, E. Siivola, T. Colpitts, B. O'Quinn, Nature 2001, 413, 597-602.
15. J. R. Szczech, J. M. Higgins, S. Jin, J. Mater. Chem. 2011, 21, 4037-4055.
16. S. K. Bux, J.-P. Fleurial, R. B. Kaner, Chem. Commun. 2010, 46, 8311-8324.
17. P. F. P. Poudeu, M. G. Kanatzidis, Chem. Commun. 2005, 2672-2674.
18. K. Kifune, Y. Kubota, T. Matsunaga, N. Yamada, Acta Crystallogr. Sect. B 2005, 61, 492-497.
19. C. S. Barrett, P. Cucka, K. Haefner, Acta Crystallogr. 1963, 16, 451-453.
20. T. L. Anderson, H. B. Krause, Acta Crystallogr. Sect. B 1974, 30, 1307-1310.
21. M. N. Schneider, O. Oeckler, Z. Anorg. Allg. Chem. 2008, 634, 2557-2561.
22. L. E. Shelimova, O. G. Karpinsky, M. A. Kretova, V. I. Kosyakov, V. A. Shestakov, V. S. Zemskov, F. A. Kuznetsov, Inorg. Mater. 2000, 36, 768-775.
23. O. G. Karpinsky, L. E. Shelimova, M. A. Kretova, J.-P. Fleurial, J. Alloys Compd. 1998, 268, 112-117.
24. T. Matsunaga, R. Kojima, N. Yamada, K. Kifune, Y. Kubota, M. Takata, Appl. Phys. Lett. 2007, 90, 161919.
25. M. N. Schneider, M. Seibald, O. Oeckler, Dalton Trans. 2009, 2004-2011.
26. M. N. Schneider, O. Oeckler, Z. Anorg. Allg. Chem. 2010, 636, 137-143.
27. O. Oeckler, M. N. Schneider, F. Fahrnbauer, G. Vaughan, Solid State Sci. 2011, 13, 1157-1161.
28. M. N. Schneider, T. Rosenthal, C. Stiewe, O. Oeckler, Z. Kristallogr. 2010, 225, 463-470.
29. H. Lind, S. Lidin, Solid State Sci. 2003, 5, 47-57.
30. M. N. Schneider, M. Seibald, P. Lagally, O. Oeckler, J. Appl. Crystallogr. 2010, 43, 1012-1020.
31. B. Legendre, C. Hancheng, S. Bordas, M. T. Clavaguera-Mora, Thermochim. Acta 1984, 78, 141-157.
32. V. I. Kosyakov, V. A. Shestakov, L. E. Shelimova, F. A. Kuznetsov, V. S. Zemskov, Inorg. Mater. 2000, 36, 1004-1017.
33. S. Bordas, M. T. Clavaguera-Mora, B. Legendre, C. Hancheng, Thermochim. Acta 1986, 107, 239-265.
34. A. Stegherr, Philipp. Sci. Philips Res. Repts. Suppl. 1969, 6, 1-72.
35. R. Wulf, Acta Crystallogr. Sect. A 1990, 46, 681-688.
36. B.L. Henke, E.M. Gullikson, J.C. Davis, Atomic Data and Nuclear Data Tables 1993, 54, 181-342.
37. C.T. Chantler, K. Olsen, R.A. Dragoset, J. Chang, A.R. Kishore, S.A. Kotochigova, D.S. Zucker, X-Ray Form Factor, Attenuation and Scattering Tables, Version 2.1, National Institute of Standards and Technology, Gaithersburg MD, 2005.
38. V. Petricek, M. Dusek, L. Palatinus, JANA2006-The crystallographic computing system, Institute of Physics, Praha, Czech Republic, 2006.
39. T. Chattopadhyay, J. X. Boucherle, H. G. vona Schnering, J. Phys. D J. Phys. C: Solid State Phys. 1987, 20, 1431-1440.
40. T. Matsunaga, N. Yamada, Y. Kubota, Acta Crystallogr. Sect. B 2004, 60, 685-691.
41. H. Böttner, G. Chen, R. Venkatasubramanian, MRS Bull. 2006, 31, 211-217.
42. F. R. Harris, S. Standridge, C. Feik, D. C. Johnson, Angew. Chem. 2003, 115, 5454-5457
43. Angew. Chem. Int. Ed. 2003, 42, 5296-5299.
44. O. Oeckler, M. N. Schneider, T. Rosenthal, C. Stiewe, Z. Anorg. Allg. Chem. 2010, 636, 2095.
45. J. Oestreich, Ph.D. Thesis, University of Konstanz, Germany, 2001.
46. P. P. Konstantinov, L. E. Shelimova, E. S. Avilov, M. A. Kretova, V. S. Zemskov, Inorg. Mater. 2001, 37, 662-668.
47. V. A. KulbachinskiÄ, A. Y. KaminskiÄ, P. M. Tarasov, P. Lostak, Phys. Solid State 2006, 48, 833-840.
48. J. L. Cui, H. Fu, X. L. Liu, D. Y. Chen, W. Yang, Curr. Appl. Phys. 2009, 9, 1170-1174.
49. M. Kuwahara, O. Suzuku, N. Takethosi, T. Yagi, P. Fons, J. Tominaga, T. Baba, Jpn. J. Appl. Phys. 2007, 46, 6863-6864.
50. J. W. G. Bos, H. W. Zandbergen, M.-H. Lee, N. P. Ong, R. J. Cava, Phys. Rev. B 2007, 75, 195203.
51. D. Pinisetty, R. V. Devireddy, Acta Mater. 2010, 58, 570-576.
52. T. C. Chong, L. P. Shi, X. S. Miao, P. K. Tan, R. Zhao, Z. P. Cai, Jpn. J. Appl. Phys. 2000, 39, 737-740.
53. T. C. Chong, L. P. Shi, R. Zhao, P. K. Tan, J. M. Li, H. K. Lee, X. S. Miao, A. Y. Du, C. H. Tung, Appl. Phys. Lett. 2006, 88, 122114.
54. H. Yang, T. C. Chong, R. Zhao, H. K. Lee, J. Li, K. G. Lim, L. Shi, Appl. Phys. Lett. 2009, 94, 203110.
55. M. Hase, Y. Miyamoto, J. Tominaga, Phys. Rev. B 2009, 79, 174112.
56. WINXPOW, Version 2.12, Stoe & Cie. GmbH, Darmstadt, 2005.
57. A. Coelho, TOPAS -Academic, V. 4.1; Coelho Software, Brisbane, 2007.
58. SAINT, v6.01, Bruker AXS, Madison USA 1999.
59. XPREP, Version 6.12, Siemens Analytical X-ray Instruments Inc., Madison, Wisconsin,USA, 1996.
60. G. M. Sheldrick, Acta Crystallogr. Sect. A 2008, 64, 112-122.
61. SADABS, v2.03, Bruker AXS, Madison USA 1999.
62. P. Stadelmann, Ultramicroscopy 1987, 21, 131-145.