Electrical modeling of Cu(In,Ga)Se 2 cells with ALD-Zn 1-xMg xO buffer layers

Journal of Applied Physics

Volumn 111, Issue 1, 2012, Pages

  Pettersson, J ^a   Edoff, M ^a   Platzer Bjorkman C ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR STATE; CROSS-OVER; CU(IN , GA)SE; DEVICE MODELS; DONOR DENSITY; ELECTRICAL MODELING; ELECTRON-CAPTURE CROSS SECTIONS; LIGHT SOAKING; LOW TEMPERATURES; MEASUREMENT DATA; PERSISTENT PHOTOCONDUCTIVITY; ROOM TEMPERATURE; SOLAR CELL PARAMETERS; WIDE BAND GAP; ZNO;

BUFFER LAYERS; COMPUTER SIMULATION; GALLIUM; MEASUREMENTS; SURFACE DEFECTS; ZINC OXIDE;

ZINC;

EID: 84855914504     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3672813     Document Type: Article

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