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Volumn 520, Issue 6, 2012, Pages 2265-2268

Kinetics of occupancy of defect states in poly(3-hexylthiophene):fullerene solar cells

Author keywords

Capacitance; Cathode; Defects; Mott Schottky; Organic solar cells

Indexed keywords

ACTIVE LAYER; ANGULAR FREQUENCIES; BANDBENDING; BULK HETEROJUNCTION; CAPACITANCE METHOD; CAPACITANCE VOLTAGE; CHARACTERISTIC FREQUENCIES; DEFECT BANDS; DEFECT STATE; EFFECTIVE BAND GAP; JUNCTION CAPACITANCES; KINETICS OF DEFECTS; METHYL ESTERS; MOLECULAR ORBITAL LEVELS; MOTT-SCHOTTKY; ORGANIC SOLAR CELLS; P-DOPING; POLY-3-HEXYLTHIOPHENE; TOTAL DENSITY; VOLTAGE PERTURBATIONS;

EID: 84855912750     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.09.044     Document Type: Article
Times cited : (15)

References (32)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.