Dependence of photoluminescence of ZnO/Zn0.85Mg0.15O multi-quantum wells on barrier width

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 373, Issue 36, 2009, Pages 3281-3284

  Gu, Xiuquan ^a,b   He, Haiping ^a   Zhu, Liping ^a   Ye, Zhizhen ^a   Huo, Kaifu ^b   Chu, Paul K ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Exciton emission; Localization; MQW; Photoluminescence

Indexed keywords

ACTIVATION ENERGY; EXCITONS; II-VI SEMICONDUCTORS; PHOTOLUMINESCENCE; TELECOMMUNICATION REPEATERS; ZINC OXIDE;

EXCITON EMISSION; INTERFACE FLUCTUATION; LOCALIZATION; LOCALIZED EXCITON; MULTI QUANTUM WELL STRUCTURES; MULTI QUANTUM WELLS; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; TEMPERATURE INCREASE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 68349105777     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2009.07.011     Document Type: Article

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