Playing with dimensions: Rational design for heteroepitaxial p-n junctions

Nano Letters

Volumn 12, Issue 1, 2012, Pages 68-76

  Lee, Tae Il ^a   Lee, Sang Hoon ^a   Kim, Young Dong ^a   Jang, Woo Soon ^a   Oh, Jin Young ^a   Baik, Hong Koo ^a   Stampfl, Catherine ^b   Soon, Aloysius ^a   Myoung, Jae Min ^a  

^a Yonsei University   (South Korea)

^b UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Epitaxial growth; heterogeneous p n junction; spinel cobalt (II,III) oxide nanoplate; wurzite ZnO nanorod

Indexed keywords

COBALT OXIDES; ELECTRICAL PERFORMANCE; EPITAXIAL RELATIONS; EPITAXIALLY GROWN; FIRST-PRINCIPLES CALCULATION; HETEROEPITAXIAL; IDEALITY FACTORS; LATTICE ORIENTATIONS; LOW TEMPERATURES; NANO-PLATE; NANOPLATES; P-N JUNCTION; P-TYPE; RATIONAL DESIGN; SOLUTION PROCESS; SPINEL COBALT (II,III) OXIDE NANOPLATE; SPINEL STRUCTURE; STRESS-INDUCED; WURZITE; ZNO; ZNO NANOROD; ZNO NANOWIRES;

CALCULATIONS; COBALT; DIODES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANORODS; NANOWIRES; PYROLYSIS; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

EPITAXIAL GROWTH;

COBALT; COBALT OXIDE; NANOMATERIAL; OXIDE; ZINC OXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

COBALT; CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; OXIDES; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES; ZINC OXIDE;

EID: 84855798449     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202963z     Document Type: Article

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