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Volumn 10, Issue , 2011, Pages 61-65

Polycrystalline silicon thin films by high-rate electronbeam evaporation for photovoltaic applications - Influence of substrate texture and temperature

Author keywords

Crystallization kinetics; Electron beam evaporation; Polycrystalline silicon; Thin film solar cells

Indexed keywords

AMORPHOUS SILICON LAYERS; CELL PREPARATION; COST-SAVING; DEPOSITION TECHNIQUE; DIRECT GROWTH; E BEAM EVAPORATION; ELECTRON BEAM EVAPORATION; ELEVATED TEMPERATURE; EVAPORATED SILICON; HIGH RATE; HIGH-QUALITY MATERIALS; HIGH-RATE DEPOSITION; HIGHER TEMPERATURES; LIGHT-TRAPPING; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC PERFORMANCE; POLY-CRYSTALLINE SILICON; POLY-SI FILMS; POLY-SI THIN FILM; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN FILM; ROUGH SURFACES; SMOOTH SUBSTRATES; SOLAR CELL PERFORMANCE; SOLID-PHASE CRYSTALLIZATION; SUBSTRATE MICROSTRUCTURE; SUBSTRATE TEXTURE; TEXTURED SUBSTRATES; THIN FILM FABRICATION; THIN FILM SOLAR CELL TECHNOLOGY; THIN FILM SOLAR CELLS; ZNO FILMS;

EID: 84855694195     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.10.153     Document Type: Conference Paper
Times cited : (35)

References (9)
  • 6
    • 70350707502 scopus 로고    scopus 로고
    • Microstructure and photovoltaic performance of polycrystalline silicon thin films on temperature-stable ZnO:Al layers
    • Becker C, Ruske F, Sontheimer T, Gorka B, Bloeck U, Gall S, Rech B. Microstructure and photovoltaic performance of polycrystalline silicon thin films on temperature-stable ZnO:Al layers. J. Appl.Phys. 2009;106:084506.
    • (2009) J. Appl.Phys. , vol.106 , pp. 084506
    • Becker, C.1    Ruske, F.2    Sontheimer, T.3    Gorka, B.4    Bloeck, U.5    Gall, S.6    Rech, B.7
  • 7
    • 70249083005 scopus 로고    scopus 로고
    • Crystallization kinetics in electron-beam evaporated amorphous silicon on ZnO:Al-coated glass for thin film solar cells
    • Sontheimer T, Becker C, Bloeck U, Gall S, Rech B. Crystallization kinetics in electron-beam evaporated amorphous silicon on ZnO:Al-coated glass for thin film solar cells. Appl.Phys.Lett. 2009;95:101902.
    • (2009) Appl.Phys.Lett. , vol.95 , pp. 101902
    • Sontheimer, T.1    Becker, C.2    Bloeck, U.3    Gall, S.4    Rech, B.5
  • 8
    • 84951050944 scopus 로고
    • Dislocation etch for (100) planes in silicon
    • Secco d'Aragona F. Dislocation Etch for (100) Planes in Silicon. J. Electrochem. Soc. 1972;119:948.
    • (1972) J. Electrochem. Soc. , vol.119 , pp. 948
    • Secco D'aragona, F.1
  • 9
    • 80053525043 scopus 로고    scopus 로고
    • Characterization and control of the solid phase crystallization kinetics of electron beam evaporated silicon for thin film solar cells
    • Accepted for publication in
    • Sontheimer T, Scherf S, Klimm C, Becker C, Rech B. Characterization and control of the solid phase crystallization kinetics of electron beam evaporated silicon for thin film solar cells. Accepted for publication in J.Appl.Phys. 2011.
    • (2011) J.Appl.Phys.
    • Sontheimer, T.1    Scherf, S.2    Klimm, C.3    Becker, C.4    Rech, B.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.