Confined high-pressure chemical deposition of hydrogenated amorphous silicon

Journal of the American Chemical Society

Volumn 134, Issue 1, 2012, Pages 19-22

  Baril, Neil F ^a   He, Rongrui ^a   Day, Todd D ^a   Sparks, Justin R ^a   Keshavarzi, Banafsheh ^b   Krishnamurthi, Mahesh ^a   Borhan, Ali ^b   Gopalan, Venkatraman ^a   Peacock, Anna C ^c   Healy, Noel ^c   Sazio, Pier J A ^c   Badding, John V ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; CHEMICAL DEPOSITION; CONVENTIONAL REACTORS; DEPOSITED FILMS; ELECTRONIC APPLICATION; GASPHASE; HYDROGEN INCORPORATION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); KINETIC BARRIER; NONLINEAR OPTICAL FIBER; NUCLEATED PARTICLES; ORDERS OF MAGNITUDE; PRECURSOR CONCENTRATION; SILANE CONCENTRATIONS; SMALL-DIAMETER OPTICAL FIBERS;

ASPECT RATIO; DANGLING BONDS; ELECTRONIC PROPERTIES; HYDROGEN; HYDROGEN BONDS; HYDROGENATION; NANOWIRES; OPTICAL FIBERS; REACTION RATES; SEMICONDUCTOR MATERIALS;

AMORPHOUS SILICON;

GLASS FIBER; HYDROGEN; SILANE; SILICON DIOXIDE;

ARTICLE; CONCENTRATION (PARAMETERS); CONTROLLED STUDY; DECOMPOSITION; ELECTRONICS; HIGH PRESSURE CHEMICAL DEPOSITION; HYDROGENATION; LOW TEMPERATURE; MICROREACTOR; NANOREACTOR; OPTICS; REACTOR; SEMICONDUCTOR; SURFACE PROPERTY;

EID: 84855685241     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja2067862     Document Type: Article

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