Silicon quantum dot formation in SiC/SiO x hetero-superlattice

Energy Procedia

Volumn 10, Issue , 2011, Pages 249-254

  Ding, Kaining ^a   Aeberhard, Urs ^a   Astakhov, Oleksandr ^a   Köhler, Florian ^a   Beyer, Wolfhard ^a   Finger, Friedhelm ^a   Carius, Reinhard ^a   Rau, Uwe ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

PECVD; Photoluminescence; Photothermal deflection spectroscopy; Quantum confinement; Silicon nanocrystal

Indexed keywords

AMORPHOUS MATRIX PHASE; BAND GAP ENGINEERING; BAND OFFSETS; BARRIER LAYERS; CARRIER LOCALIZATION; DEFECT CREATION; ELECTRICAL TRANSPORT; HIGH TEMPERATURE; LOW BAND GAP; MATRIX; MATRIX LAYERS; NON-TOXIC MATERIALS; PHOTOTHERMAL DEFLECTION SPECTROSCOPY; SILICON NANOCRYSTAL; SILICON NANOCRYSTALS; SILICON RICH; STRUCTURAL EVALUATION; SUPER-LATTICE STRUCTURES; TANDEM SOLAR CELLS; THERMAL-ANNEALING; TUNNEL PROBABILITY;

ELECTRON SPIN RESONANCE SPECTROSCOPY; ENERGY GAP; MAGNETIC MOMENTS; MATERIALS; NANOCRYSTALS; NITRIDES; OPTICAL WAVEGUIDES; PHASE SEPARATION; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM CONFINEMENT; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON CARBIDE; SILICON OXIDES; SUPERLATTICES; TOXIC MATERIALS;

QUANTUM CHEMISTRY;

EID: 84855665202     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.10.186     Document Type: Conference Paper

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