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Volumn 47, Issue 1, 2012, Pages 479-485

Enhancement of photoluminescence due to erbium-doped in CdS thin films

(7) Zelaya Angel, O a Tomas S A a Rodriguez P a Mendoza Alvarez, J G a Lozada Morales, R b Portillo Moreno, O b Gonzalez Hernandez J c

a DEPARTAMENTO DE FÍSICA (Mexico)

b BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA (Mexico)

c CENTRO DE INVESTIGACIÓN EN MATERIALES AVANZADOS (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; CDS; CDS THIN FILMS; CHEMICAL BATH; CHEMICAL-BATH DEPOSITION; CRYSTALLINE QUALITY; CRYSTALLINE STRUCTURE; DOPING LEVELS; ERBIUM DOPED; GREEN EMISSIONS; GROWTH PROCESS; INTERPLANAR DISTANCE; MINIMUM VALUE; PHOTOLUMINESCENCE SPECTRUM; PREFERRED ORIENTATIONS; RED EMISSIONS; ZINC-BLENDE;

CADMIUM; CADMIUM COMPOUNDS; CRYSTALLINE MATERIALS; DEPOSITION; ERBIUM; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC SULFIDE;

CADMIUM SULFIDE;

EID: 84855536059 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-011-5823-y Document Type: Article

Times cited : (20)

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