Erbium doped silicon single- and multilayer structures for light-emitting device and laser applications

Journal of Materials Research

Volumn 21, Issue 3, 2006, Pages 574-583

  Krasilnik, Zakhary F ^a   Andreev, Boris A ^a   Kryzhkov, Denis I ^a   Krasilnikova, Ludmila V ^a   Kuznetsov, Viktor P ^a   Remizov, Dmitry Yu ^a   Shmagin, Viacheslav B ^a   Stepikhova, Margarita V ^a   Yablonskiy, Artem N ^a   Gregorkievicz, Tom ^b   Vinh, Nguyen Q ^b   Jantsch, Wolfgang ^c   Przybylinska, Hanka ^d   Timoshenko, Victor Yu ^e   Zhigunov, Denis M ^e  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b UNIVERSITY OF AMSTERDAM   (Netherlands)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^d INSTITUTE OF PHYSICS   (Poland)

^e MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ERBIUM; LASER APPLICATIONS; LIGHT EMITTING DIODES; MULTILAYERS;

ERBIUM DOPED SILICON; MULTILAYER STRUCTURES; SINGLE STRUCTURE;

SILICON;

EID: 33645128511     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0083     Document Type: Review

References (18)

1. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann: 1.54-μm luminescence of erbium-implanted III-V semiconductors and silicon. Appl. Phys. Lett. 43, 943 (1983).
2. H. Ennen, G. Pomrenke, A. Axmann, W. Haydl, and J. Schneider: 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy. Appl. Phys. Lett. 46, 381 (1985).
3. 3+ in crystalline Si. Phys. Rev. B 57, 4443 (1998).
4. K. Takahei and A. Taguchi: Energy transfer in rare-earth-doped III-V semiconductors. Mater. Sci. Forum 83-87, 641 (1992).
5. V.P. Kuznetsov and R.A. Rubtsova: Special features of the sublimation molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures. Semiconductors 34, 502 (2000).
6. x layers grown by the sublimation MBE method. Thin Solid Films 381, 164 (2001).
7. B. Andreev, V. Chalkov, O. Gusev, A. Emel'yanov, Z. Krasil'nik, V. Kuznetsov, P. Pak, V. Shabanov, V. Shengurov, V. Shmagin, N. Sobolev, M. Stepikhova, and S. Svetlov: Realization of photo-and electroluminescent Si:Er structures by the method of sublimation molecular beam epitaxy. Nanotechnology 13, 97 (2002).
8. Z.F. Krasilnik, V. Ya. Aleshkin, B.A. Andreev, O.B. Gusev, W. Jantsch, L.V. Krasilnikova, D.I. Kryzhkov, V.P. Kuznetsov, V.G. Shengurov, V.B. Shmagin, N.A. Sobolev, M.V. Stepikhova, and A.N. Yablonsky: SMBE grown uniformly and selectively doped Si:Er structures for LEDs and lasers, in Towards the First Silicon Laser, NATO Science Series, edited by L. Pavesi, S. Gaponenko, and L. Dal Negro, (Kluwer Acadamic Publishers, Dordrecht, The Netherlands, 2003), pp. 445-454.
9. V.B. Shmagin, V.P. Kuznetsov, D.Yu. Remizov, Z.F. Krasil'nik, L.V. Krasil'nikova, and D.I. Kryzhkov: Effect of the breakdown nature on Er-related electroluminescence intensity and excitation efficiency in Si:Er light emitting diodes grown with sublimation MBE technique. Mater. Sci. Eng. B 105(1-3), 70 (2004).
10. W. Jantsch, S. Lanzerstorfer, L. Palmetshofer, M. Stepikhova, and H. Preier: Different Er centres in Si and their use for electroluminescent devices. J. Lumin. 80, 9 (1999).
11. B.A. Andreev, A.Yu. Andreev, D.M. Gaponova, Z.F. Krasil'nik, V.P. Kuznetsov, A.V. Novikov, M.V. Stepikhova, E.A. Uskova, V.B. Shmagin, and S. Lanzerstorfer: Optically active Er-related centers in Si:Er epitaxial layers grown by the sublimation MBE method. Izvestiya Akademii Nauk Seriya Fizicheskaya. 64, 269 (2000).
12. 3+ ion imbedded in crystalline silicon, Physica B: Condensed Matter 308-310, 340 (2001).
13. N.Q. Vinh, H. Przybylińska, Z.F. Krasil'nik, and T. Gregorkiewicz: Optical properties of a single type of optically active center in Si/ Si:Er nanostructures. Phys. Rev. B70, 115332 (2004).
14. A.N. Yablonskiy, M.A.J. Klik, B.A. Andreev, V.P. Kuznetsov, Z.F. Krasilnik, and T. Gregorkiewicz: Photoluminescence excitation spectroscopy of erbium in epitaxially grown Si:Er structures. Opt. Mater. 27, 890 (2005).
15. +-Si diode structure under breakdown conditions. Phys. Solid State 47, 125 (2005).
16. F.G. Chynoweth and K.G. McKay: Photon emission from avalanche breakdown in silicon. Phys. Rev. 102, 369 (1956).
17. 3+ ions in Si:Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy. Phys. Solid State 47, 98 (2005).
18. M.V. Stepikhova, V.Yu. Timoshenko, V.G. Shengurov, D.M. Zhigunov, O.A. Shalygina, L.V. Krasil'nikova, V.Yu. Chalkov, S.P. Svetlov, Z.F. Krasil'nik, and P.K. Kashkarov: Population inversion of erbium ion energy levels by excitation transfer from semiconductor matrix in silicon/germanium structures. JETP Letters 81, 614 (2005).