1.55 μm Er-doped GaN LED

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1231-1234

  Shen, H ^a   Pamulapati, J ^a   Taysing, M ^a   Wood, M C ^a   Lareau, R T ^a   Ervin, M H ^a   MacKenzie, J D ^b   Abernathy, C R ^b   Pearton, S J ^b   Ren, F ^b   Zavada, J M ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; ERBIUM; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON WAFERS; THERMAL EFFECTS;

EMISSION SPECTRUM; ERBIUM DOPED LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0032675473     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00056-8     Document Type: Article

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