Photoluminescent properties of semiconducting Tl 6I 4Se

Semiconductor Science and Technology

Volumn 27, Issue 1, 2012, Pages

  Cho, N K ^a   Peters, J A ^a   Liu, Z ^a   Wessels, B W ^a   Johnsen, S ^b   Kanatzidis, M G ^b   Song, J H ^b   Jin, H ^b   Freeman, A ^b  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; CANDIDATE MATERIALS; DONOR AND ACCEPTOR; DONOR LEVELS; DONOR-ACCEPTOR PAIRS; EXCITATION INTENSITY; GAMMA-RAY DETECTION; IONIZATION ENERGIES; LOW TEMPERATURES; PEAK EMISSIONS; PEAK INTENSITY; PHOTO-LUMINESCENT PROPERTIES; PL MEASUREMENTS; SHALLOW DONORS; THERMAL ACTIVATION ENERGIES; THERMAL QUENCHING; UNDOPED MATERIAL; WIDE-BAND-GAP SEMICONDUCTOR;

ACTIVATION ENERGY; CRYSTAL GROWTH FROM MELT; GAMMA RAYS; SINGLE CRYSTALS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84855369632     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/1/015016     Document Type: Article

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