Thallous chalcogenide (Tl 6I 4Se) for radiation detection at X-ray and γ-ray energies

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 659, Issue 1, 2011, Pages 333-335

  Liu, Zhifu ^a   Peters, John A ^a   Wessels, Bruce W ^a   Johnsen, Simon ^b   Kanatzidis, Mercouri G ^b  

^a Northwestern University   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

ray detector; Photoconductivity; Tl chalcogenide; Wide gap semiconductor

Indexed keywords

ABSORPTION COEFFICIENTS; CHALCOGENIDE COMPOUND; DETECTOR PERFORMANCE; HOLE CARRIERS; MOBILITY-LIFETIME PRODUCTS; MODIFIED BRIDGMAN METHOD; RADIATION DETECTION; REFLECTION SPECTRA; SEMICONDUCTOR CRYSTALS; TL-CHALCOGENIDE; WIDE-GAP SEMICONDUCTOR;

CRYSTAL GROWTH FROM MELT; DETECTORS; HOLE MOBILITY; REFRACTIVE INDEX; SEMICONDUCTING SELENIUM COMPOUNDS; THALLIUM COMPOUNDS; TRANSPORT PROPERTIES; ZINC;

PHASE CHANGE MEMORY;

EID: 84860390179     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2011.07.041     Document Type: Article

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