SCOPUS 정보 검색 플랫폼

Volumn 110, Issue 12, 2011, Pages

Stress-controlled Pb(Zr 0.52Ti 0.48)O 3 thick films by thermal expansion mismatch between substrate and Pb(Zr 0.52Ti 0.48)O 3 film

(10) Han, Guifang a Ryu, Jungho a Yoon, Woon Ha a Choi, Jong Jin a Hahn, Byung Dong a Kim, Jong Woo a Park, Dong Soo a Ahn, Cheol Woo a Priya, Shashank b Jeong, Dae Yong c

a Korea Institute of Material Science (South Korea)

b State University (United States)

c Inha University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSOL DEPOSITION; C-DOMAIN; IN-PLANE; IN-PLANE STRESS; PIEZOELECTRIC PROPERTY; POLYCRYSTALLINE; PT ELECTRODE; PZT; PZT FILM; PZT THICK FILMS; SAPPHIRE SUBSTRATES; SI WAFER; STABILIZED ZIRCONIA; STRESS CONDITION; THERMAL EXPANSION MISMATCH; THICKNESS DIRECTION; WAFER SUBSTRATES;

COMPRESSIVE STRESS; FERROELECTRIC FILMS; FERROELECTRICITY; LEAD; PIEZOELECTRICITY; PLATINUM; SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; THICK FILMS; VAPOR DEPOSITION; ZIRCONIA; ZIRCONIUM;

THERMAL EXPANSION;

EID: 84855326561 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3669384 Document Type: Article

Times cited : (68)

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