Formation of Ti 2AlN phase after post-heat treatment of Ti-Al-N films deposited by pulsed magnetron sputtering

Surface and Coatings Technology

Volumn 206, Issue 10, 2012, Pages 2661-2666

  Yang, Ying ^a,b   Keunecke, Martin ^b   Stein, Christian ^b   Gao, Li Jun ^a   Gong, Jun ^a   Jiang, Xin ^c   Bewilogua, Klaus ^b   Sun, Chao ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

^b FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

^c UNIVERSITY OF SIEGEN   (Germany)

Author keywords

Heat treatment; Magnetron sputtering; Microstructure; Ti Al N films; Ti 2AlN phase

Indexed keywords

AFTER-HEAT TREATMENT; ALN; ANNEALED FILMS; AS-DEPOSITED FILMS; COLUMNAR MORPHOLOGY; CRITICAL VALUE; FILM COMPOSITION; FORMATION CONDITION; NITROGEN CONCENTRATIONS; NITROGEN FLOW RATES; PHASE COMPONENT; PHASE FORMATIONS; POLYCRYSTALLINE; POST-HEAT TREATMENT; PULSED MAGNETRON SPUTTERING; SEM IMAGE; TI-AL-N; XRD;

ANNEALING; HEAT TREATMENT; MAGNETRON SPUTTERING; METALLIC FILMS; MICROHARDNESS; MICROSTRUCTURE; MORPHOLOGY; SOLID STATE REACTIONS;

ALUMINUM;

EID: 84855257191     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2011.11.013     Document Type: Article

References (17)

1. Lin Z.J., Li M.S., Wang J.Y., Zhou Y.C. Acta Mater. 2007, 55:6182.
2. Barsoum M.W., Yoo H.I., Polushina I.K., Rud' V.Y., Rud' Y.V., El-Raghy T. Phys. Rev. B 2000, 62:10194.
3. Barsoum M.W. Prog. Solid State Chem. 2000, 28:201.
4. Frodelius J., Eklund P., Beckers M., Persson P.O.Å., Högberg H., Hultman L. Thin Solid Films 2010, 518:1621.
5. Walter C., Sigumonrong D.P., El-Raghy T., Schneider J.M. Thin Solid Films 2006, 515:389.
6. Högberg H., Hultman L., Emmerlich J., Joelsson T., Eklund P., Molina-Aldareguia J.M., Palmquist J.P., Wilhelmsson O., Jansson U. Surf. Coat. Technol. 2005, 193:6.
7. Joelsson T., Hörling A., Birch J., Hultman L. Appl. Phys. Lett. 2005, 86:111913.
8. Persson P.O.Å., Kodambaka S., Petrov I., Hultman L. Acta Mater. 2007, 55:4401.
9. Beckers M., Schell N., Martins R.M.S., Mücklich A., Möller W. Appl. Phys. Lett. 2006, 89:074101.
10. Höglund C., Beckers M., Schell N., Borany J.V., Birch J., Hultman L. Appl. Phys. Lett. 2007, 90:174106.
11. Wang Q.M., Flores Renteria A., Leyens C. J. Nanosci. Nanotechnol. 2011, 11:1.
12. Garkas W., Leyens C., Flores Renteria A. Adv. Mater. Res. 2010, 89-91:208.
13. Eklund P., Beckers M., Jansson U., Högberg H., Hultman L. Thin Solid Films 2010, 518:1851.
14. Emmerlich J., Högberg H., Sasvári S., Persson P.O.Å., Hultman L., Palmquist J.P., Jansson U., Molina-Aldareguia J.M., Czigány Z. J. Appl. Phys. 2004, 96:4817.
15. Lin Z.J., Zhuo M.J., Li M.S., Wang J.Y., Zhou Y.C. Scr. Mater. 2007, 56:1115.
16. Armstrong R.W., Codd I., Deuthwaith R., Petch N.J. Philos. Mag. 1962, 7:45.
17. Jovic V.D., Jovic B.M., Gupta S., EI-Raghy T., Barsoum M.W. Corros. Sci. 2006, 48:4274.