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Volumn 50, Issue 9-11, 2010, Pages 1210-1214

Determination of the stress level for voltage screen of integrated circuits

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; DEFECTIVITY; GENERAL APPROACH; PROCESS RELIABILITY; RULE OF THUMB; STRESS LEVELS; STRESS VOLTAGES;

EID: 84755161086     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.103     Document Type: Conference Paper
Times cited : (3)

References (10)
  • 3
    • 0035684392 scopus 로고    scopus 로고
    • Extreme voltage stress vector generation of analog CMOS ICs for gate oxide reliability enhancement
    • Khalil MA, Wey CL. Extreme voltage stress vector generation of analog CMOS ICs for gate oxide reliability enhancement. In: ITC international test conference; 2001. p. 348-57.
    • (2001) ITC International Test Conference , pp. 348-357
    • Khalil, M.A.1    Wey, C.L.2
  • 5
    • 0004915432 scopus 로고    scopus 로고
    • Technique for determining a prudent voltage stress to improve product quality and reliability
    • R.C. Blish, J.C. Black, B. Hui, and D.T. Prince Technique for determining a prudent voltage stress to improve product quality and reliability Microelectron Reliab 40 2000 1615 1618
    • (2000) Microelectron Reliab , vol.40 , pp. 1615-1618
    • Blish, R.C.1    Black, J.C.2    Hui, B.3    Prince, D.T.4
  • 6
    • 77956527272 scopus 로고    scopus 로고
    • Determination of the maximum voltage for a product screening stress based on TDDB and HC measurements
    • Kuge HH. Determination of the maximum voltage for a product screening stress based on TDDB and HC measurements. IRW final report; 2003. p. 115-8.
    • (2003) IRW Final Report , pp. 115-118
    • Kuge, H.H.1
  • 8
    • 0020733451 scopus 로고
    • An empirical model for device degradation due to hot-carrier injection
    • E. Takeda, and N. Suzuki An empirical model for device degradation due to hot-carrier injection IEEE Electron Dev Lett EDL-4 1983 111 113 (Pubitemid 14455390)
    • (1983) Electron device letters , vol.4 , Issue.4 , pp. 111-113
    • Takeda, E.1    Suzuki, N.2
  • 9
    • 0027542095 scopus 로고
    • Time dependence of p-MOSFET hot carrier degradation measured and interpreted consistently over ten orders of magnitude
    • R. Woltjer, A. Hamada, and E. Takeda Time dependence of p-MOSFET hot carrier degradation measured and interpreted consistently over ten orders of magnitude IEEE Trans Electron Dev 40 1993 392 401
    • (1993) IEEE Trans Electron Dev , vol.40 , pp. 392-401
    • Woltjer, R.1    Hamada, A.2    Takeda, E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.