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Volumn 2003-January, Issue , 2003, Pages 115-118
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Determination of the maximum voltage for product screening stress based on TDDB and HC measurements
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Author keywords
Acceleration; Degradation; Hot carriers; Leakage current; Life testing; Semiconductor device measurement; Semiconductor device modeling; Stress measurement; Temperature dependence; Voltage
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Indexed keywords
DEGRADATION;
RELIABILITY;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR DEVICES;
STRESS MEASUREMENT;
TEMPERATURE DISTRIBUTION;
HOT CARRIER MEASUREMENTS;
HOT-CARRIER LIFETIME;
HOT-CARRIERS;
LIFE-TESTING;
LIFETIME MODELS;
PRODUCT LIFETIME;
SEMICONDUCTOR DEVICE MEASUREMENTS;
STRESSES MEASUREMENTS;
TDDB LIFETIME;
TEMPERATURE DEPENDENCE;
HOT CARRIERS;
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EID: 77956527272
PISSN: 19308841
EISSN: 23748036
Source Type: Conference Proceeding
DOI: 10.1109/IRWS.2003.1283314 Document Type: Conference Paper |
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Times cited : (1)
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References (4)
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