SCOPUS 정보 검색 플랫폼

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 1, 2004, Pages 51-62

Growth of thick GaN films and seeds for bulk crystal growth

(3) Tavernier, P R a Etzkorn, E V a Clarke, D R a

a Santa Barbara (United States)

Author keywords

Crystal growth; GaN; Seeds

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR JUNCTIONS; THICK FILMS; VAPOR PHASE EPITAXY;

MATERIALS-BASED TECHNOLOGY; POLARITIES; SEED CRYSTALS; THREADING DISLOCATIONS;

GALLIUM NITRIDE;

EID: 8444244108 PISSN: 01291564 EISSN: None Source Type: Journal
DOI: 10.1142/S0129156404002235 Document Type: Article

Times cited : (1)

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