Impurity states in the narrow band-gap semiconductor n-type InSb

Solid State Communications

Volumn 99, Issue 4, 1996, Pages 295-297

  Ferreira Da Silva, A ^a   Souza Dantas, N ^b   De Brito Mota, F ^b,c   Canuto, S ^c   Fazzio, A ^c  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b FEDERAL UNIVERSITY OF BAHIA   (Brazil)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

A. disordered systems; A. semiconductors; C. impurities in semiconductors; D. optical properties

Indexed keywords

ABSORPTION SPECTROSCOPY; CALCULATIONS; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ENERGY GAP; INFRARED SPECTROSCOPY; INTEGRAL EQUATIONS; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS;

DISORDERED SYSTEMS; IMPURITY STATES; IONIZATION ENERGY; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTOR IMPURITIES;

ELECTRON ENERGY LEVELS;

EID: 0030194030     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)80022-6     Document Type: Article

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