Study of enhanced phosphorus activity in n-type Si80Ge20 as a function of the doping process

Journal of Materials Research

Volumn 11, Issue 1, 1996, Pages 55-62

  Man, S H ^a   Cook, B A ^a  

^a IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DEFECTS; DIFFUSION IN GASES; DOPING (ADDITIVES); ELECTRIC POWER FACTOR; ELECTRIC PROPERTIES; MECHANICAL ALLOYING; SILICON ALLOYS;

ELECTRICAL ACTIVITY; GASEOUS PHASE DOPING; HIGH DENSITY OF DEFECTS; MAXIMUM EQUILIBRIUM VALUE; NONCONVENTIONAL DOPING PROCESSES; SILICON GERMANIUM ALLOYS;

PHOSPHORUS;

EID: 0029771278     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.1996.0008     Document Type: Article

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