Bandgap narrowing in silicon solar cells considering the p-type doping material

Solid-State Electronics

Volumn 41, Issue 1, 1997, Pages 121-124

  Nubile, P ^a   Ferreira Da Silva, A ^a,b  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; IONIZATION; NUMERICAL METHODS; PHASE TRANSITIONS; RANDOM PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BANDGAP NARROWING; COULOMB INTERACTION ENERGY; DOPING CONCENTRATION; OPEN CIRCUIT VOLTAGE;

SILICON SOLAR CELLS;

EID: 0004363203     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00127-X     Document Type: Article

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