Stone-Wales defects can cause a metal-semiconductor transition in carbon nanotubes depending on their orientation

Journal of Physics Condensed Matter

Volumn 24, Issue 3, 2012, Pages

  Partovi Azar, P ^a   Namiranian, A ^a,b  

^a INSTITUTE FOR RESEARCH IN FUNDAMENTAL SCIENCES IPM   (Iran)

^b IRAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP OPENINGS; CIRCUMFERENTIAL DEFECTS; DEFECT CONCENTRATIONS; DEFECT ORIENTATION; GEOMETRIC FEATURE; HOPPING ENERGIES; LOW ENERGY ELECTRONS; METAL-SEMICONDUCTOR TRANSITIONS; ORBITAL CHARGES; SMALL BANDGAP; STONE-WALES DEFECTS; SYMMETRY-BREAKING;

CARBON NANOTUBES; DEFECT DENSITY; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; SEMICONDUCTOR DOPING; TUBES (COMPONENTS);

DEFECTS;

EID: 84255182938     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/3/035301     Document Type: Article

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