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Volumn 6, Issue 1, 2011, Pages

An investigation into the conversion of In2O3 into InN nanowires

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; AMMONIA; CRYSTAL STRUCTURE; III-V SEMICONDUCTORS; NANOWIRES; NITRIDATION; INDIUM; X RAY DIFFRACTION;

EID: 84255172277     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-311     Document Type: Article
Times cited : (24)

References (15)
  • 1
    • 58149333206 scopus 로고    scopus 로고
    • Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport
    • Othonos A, Zervos M, Pervolaraki M: Ultrafast Carrier Relaxation in InN Nanowires Grown by Reactive Vapor Transport. Nanoscale Res Lett 2009, 4:122.
    • (2009) Nanoscale Res Lett , vol.4 , pp. 122
    • Othonos, A.1    Zervos, M.2    Pervolaraki, M.3
  • 2
    • 70349328433 scopus 로고    scopus 로고
    • Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
    • Tsokkou D, Othonos A, Zervos M: Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers. J Appl Phys 2009, 106:05431.
    • (2009) J Appl Phys , vol.106 , pp. 05431
    • Tsokkou, D.1    Othonos, A.2    Zervos, M.3
  • 4
    • 78650898677 scopus 로고    scopus 로고
    • 2: Effects on the photoluminescence properties
    • Othonos and x0391;,Zervos and x039C;, Christofides C: A systematic investigation into the conversion of β-Ga2O3 to GaN nanowires using NH3 and H2: Effects on the photoluminescence properties.J Appl Phys 2010,108:124319.
    • (2010) J Appl Phys , pp. 108
    • Othonos, A.1    Zervos, M.2    Christofides, C.3
  • 5
    • 70349987771 scopus 로고    scopus 로고
    • Synthesis of Tin Nitride SnxNy Nanowires by Chemical Vapour Deposition
    • Zervos M, Othonos A: Synthesis of Tin Nitride SnxNy Nanowires by Chemical Vapour Deposition. Nanoscale Res Lett 2009, 4:1103.
    • (2009) Nanoscale Res Lett , vol.4 , pp. 1103
    • Zervos, M.1    Othonos, A.2
  • 11
    • 45849106114 scopus 로고    scopus 로고
    • 3 nanorods with rectangular cross sections
    • Yan Y, Zhou L: Competitive growth of In2O3 nanorods with rectangular cross sections. Appl Phys A 2008, 92:401.
    • (2008) Appl Phys A , vol.92 , pp. 401
    • Yan, Y.1    Zhou, L.2
  • 13
    • 0037654962 scopus 로고    scopus 로고
    • Fabrication and photoluminescence characteristics of single crystalline In2O3 nanowires
    • Wu XC, Hong JM, Han ZJ, Tao YR: Fabrication and photoluminescence characteristics of single crystalline In2O3 nanowires. Chem Phys Lett 2003, 373:28.
    • (2003) Chem Phys Lett , vol.373 , pp. 28
    • Wu, X.C.1    Hong, J.M.2    Han, Z.J.3    Tao, Y.R.4
  • 14
    • 0037251288 scopus 로고    scopus 로고
    • 3 and its thermal stability
    • Gao L, Zhang Q, Li J: Preparation of ultrafine InN powder by the nitridation of In2O3 or In(OH)3 and its thermal stability. J Mater Chem 2003,13:154.
    • (2003) J Mater Chem , vol.13 , pp. 154
    • Gao, L.1    Zhang, Q.2    Li, J.3
  • 15
    • 14644430320 scopus 로고    scopus 로고
    • Fabrication of ordered InN nanowire arrays and their photoluminescence properties
    • Zhang J, Xu B, Jiang F, Yang Y, Li J: Fabrication of ordered InN nanowire arrays and their photoluminescence properties. Phys Lett A 2005, 337:121.
    • (2005) Phys Lett A , vol.337 , pp. 121
    • Zhang, J.1    Xu, B.2    Jiang, F.3    Yang, Y.4    Li, J.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.