Simple two-step fabrication method of Bi2Te3 nanowires

Nanoscale Research Letters

Volumn 6, Issue 1, 2011, Pages

  Kang, Joohoon ^a   Noh, Jin Seo ^a   Lee, Wooyoung ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOWIRES; TELLURIUM COMPOUNDS; TOPOLOGICAL INSULATORS; BISMUTH; FILM GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

BISMUTH TELLURIDE; CONVENTIONAL METHODS; FABRICATION METHOD; FILM FORMATIONS; INSULATOR APPLICATIONS; NANOWIRE STRUCTURES; RELIABLE METHODS; SINGLE-CRYSTALLINE; [110] DIRECTION; HIGH QUALITY;

BISMUTH COMPOUNDS; NANOWIRES;

EID: 84255168554     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-277     Document Type: Article

References (19)

1. Holmes J, Johnston K, Doty R, Korgel B: Control of thickness and orientation of solution-grown Silicon nanowires. Science 2000, 287:1471-1473.
2. Wang J: Nanomaterial-based electrochemical biosensors. Analyst 2005, 130:421-426.
3. Ng H, Li J, Smith M, Nguyen P, Cassell A, Han J, Meyyappan M: Growth of epitaxial nanowires at the junctions of nanowalls. Science 2003, 300:1249.
4. Hicks L, Dresselhaus M: Thermoelectric figure of merit of a one-dimensional semiconductor. Phys Rev B 1993, 47:16631-16634.
5. Dresselhaus M, Dresselhaus G, Sun X, Zhang Z, Cronin SB, Koga T: Low dimensional thermoelectric materials. Phys Solid State 1999, 41:679-682.
6. Dresselhaus M, Dresselhaus G, Sun X, Zhang Z, Cronin SB, Koga T, Ying JY, Chen G: The promise of low-dimensional thermoelectric materials. Microscale Thermophys Eng 1999, 3:89-100.
7. Rowe D: Thermoelectrics Handbook: Macro to Nano New York: Taylor & Francis; 2006.
8. Zhang H, Liu C, Qi X, Dai X, Fang Z, Zhang S: Topological insulators in Bi2Se3, Bi2Te3, and Sb2Te3 with a single Dirac cone on the surface. Nat Phys 2009, 5:438.
9. Moore J: Topological insulators: The next generation. Nat Phys 2009, 5:378.
10. Prieto A, Sander M, Gonzalez M, Gronsky R, Sands T, Stacy A: The electrodeposition of high-density, ordered arrays of Bi1-xSbx nanowires. J Am Chem Soc 2001, 123:7160-7161.
11. Trahey L, Becker C, Stacy A: Electrodeposited Bismuth Telluride nanowire arryas with uniform growth fronts. Nano Lett 2007, 7:2535-2539.
12. Wang W, Wan C, Wang Y: Investigation of electrodeposition of Bi2Te3nanowires into nanoporous alumina templates with a rotating electrode. J Phys Chem B 2006, 110:12974-12980.
13. Gonzalez M, Snyder G, Prieto A, Gronsky R, Sands T, Stacy A: Direct electrodeposition of highly dense 50 nm Bi2Te3-ySey nanowire arrays. Nano Lett 2003, 3:973-977.
14. Gonzalez M, Prieto A, Gronsky R, Sands T, Stacy A: Insights into the electrodeposition mechanisms of Bi2Te3. J Electrochem Soc 2002, 149: C546-C554.
15. Menke E, Li Q, Penner R: Bismuth Telluride nanowires synthesized by cyclic electrodeposition/stripping coupled with step edge decoration. Nano Lett 2004, 4:2009-2014.
16. Cronin SB, Lin YM, Koga T, Sun X, Ying JY, Dresselhaus MS: Thermoelectric investigation of bismuth nanowires. International Conference on Thermoelectrics 1999, 554-557.
17. Shim W, Ham J, Lee K, Jeung W, Johnson M, Lee W: On-film formation of Bi nanowires with extraordinary electron mobility. Nano Lett 2009, 9:18-22.
18. Ham J, Shim W, Kim D, Lee S, Roh J, Sohn S, Oh K, Voorhees P, Lee W: Direct growth of compound semiconductor nanowires by on-film formation of nanowires: Bismuth telluride. Nano Lett 2009, 9:2867.
19. Giannuzzi LA, Stevens FA: Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and Practice. Springer Press 2004.