Oxygen vacancy related relaxation and conduction behavior in (1 - X) NBT-xBiCrO 3 solid solution

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 118-125

  Selvamani, R ^a   Singh, G ^a   Tiwari, V S ^a   Gupta, P K ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

dielectric relaxation; impedance spectroscopy; oxygen defects

Indexed keywords

AC-CONDUCTIVITY; CONDUCTIVITY DATA; CONDUCTIVITY MEASUREMENTS; ELECTRICAL CONDUCTIVITY; IMPEDANCE SPECTROSCOPY; LONG RANGE; OXYGEN ANNEALING; OXYGEN DEFECT; OXYGEN DEFECTS; RADIO FREQUENCY RANGE; RANGE HOPPING; RELAXATION BEHAVIORS; RELAXATION PEAK; SODIUM BISMUTH TITANATE; TIO;

ACTIVATION ENERGY; BISMUTH; CHROMIUM; DEFECTS; DIELECTRIC LOSSES; DIELECTRIC RELAXATION; ELECTRIC CONDUCTIVITY; ELECTRIC CONDUCTIVITY MEASUREMENT; OXYGEN; SODIUM; SOLID SOLUTIONS; TITANIUM;

OXYGEN VACANCIES;

EID: 84055212547     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127424     Document Type: Article

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