Role of oxygen vacancies on relaxation and conduction behavior of KNbO 3 ceramic

Journal of Applied Physics

Volumn 107, Issue 6, 2010, Pages

  Singh, Gurvinderjit ^a   Tiwari, V S ^a   Gupta, P K ^a  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED OXYGEN VACANCIES; CONDUCTIVITY DATA; CONDUCTIVITY PROPERTIES; DC CONDUCTIVITY; DEFECT CONCENTRATIONS; DIELECTRIC CONSTANT VALUES; FREQUENCY DEPENDENT; OXYGEN ANNEALING; OXYGEN ATMOSPHERE; PEROVSKITE STRUCTURES; RELAXATION PEAK; SINTERING PROCESS; TEMPERATURE RANGE;

ACTIVATION ENERGY; ANNEALING; CERAMIC MATERIALS; DIELECTRIC RELAXATION; OXIDE MINERALS; OXYGEN; PERMITTIVITY; PEROVSKITE; PHASE TRANSITIONS; SINTERING;

OXYGEN VACANCIES;

EID: 77950548775     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309745     Document Type: Conference Paper

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