Dielectric relaxation in bismuth layer-structured BaBi4Ti 4O15 ferroelectric ceramics

Current Applied Physics

Volumn 11, Issue 2, 2011, Pages 203-210

  Kumar, Sunil ^a   Varma, K B R ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

AC conductivity; Dielectric relaxation; Ferroelectrics

Indexed keywords

AC CONDUCTIVITY; ARRHENIUS LAW; COLE-COLE EQUATIONS; COMPLEX IMPEDANCE; CONDUCTION MECHANISM; FERROELECTRICS; FREQUENCY DEPENDENCE; FUNCTION OF FREQUENCY; GRAIN BOUNDARY RESISTIVITY; IMAGINARY PARTS; PHASE TRANSITION TEMPERATURES; POWER LAW; RELAXATION MODELS;

ACTIVATION ENERGY; BISMUTH; DIELECTRIC PROPERTIES; DIELECTRIC RELAXATION; ELECTRIC IMPEDANCE MEASUREMENT; FERROELECTRIC CERAMICS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; TEMPERATURE;

PHASE TRANSITIONS;

EID: 78649912176     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.07.008     Document Type: Article

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