Impact of thickness variation of the ZnO:Al window layer on optoelectronic properties of CIGSSe solar cells

Materials Research Society Symposium Proceedings

Volumn 1324, Issue , 2012, Pages 109-114

  Keller, Jan ^a   Knipper, Martin ^a   Parisi, Jur̈gen ^a   Riedel, Ingo ^a   Dalibor, Thomas ^b   Avellan, Alejandro ^b  

^a Energy and Semiconductor Research Laboratory   (Germany)

^b AVANCIS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CU(IN ,GA)(SE ,S)2; CURRENT-VOLTAGE MEASUREMENTS; DOPED ZNO; OPTOELECTRONIC PROPERTIES; PROCESS TIME; SERIES CONNECTIONS; SERIES RESISTANCES; STRONG ENHANCEMENT; THICKNESS VARIATION; THIN FILM SOLAR CELLS; WINDOW LAYER; ZNO; ZNO:AL FILMS;

CONDUCTIVE FILMS; COPPER; ELECTRIC RESISTANCE; FILM THICKNESS; HEAT FLUX; METALLIC FILMS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SOLAR ENERGY; SUSTAINABLE DEVELOPMENT; ZINC OXIDE;

ALUMINUM;

EID: 84055193722     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.1058     Document Type: Conference Paper

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