Charge referencing issues in XPS of insulators as evidenced in the case of Al-Si-N thin films

Surface and Interface Analysis

Volumn 44, Issue 1, 2012, Pages 29-36

  Pelisson Schecker A ^a   Hug, H J ^a,b   Patscheider, J ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

^b UNIVERSITY OF BASEL   (Switzerland)

Author keywords

argon; charge referencing; chemical shift; gold; nitride film; XPS

Indexed keywords

ARGON ATOMS; CHARGE REFERENCING; COMPOSITE THIN FILMS; CONSTANT ENERGY; GOLD PARTICLES; INSULATING FILM; INSULATING SPECIMENS; NATIVE OXIDES; NITRIDE FILM; PEAK BROADENING; REACTIVE MAGNETRON SPUTTERING; SAMPLE SURFACE; SI CONTENT; SPECIMEN SURFACES; SPUTTER CLEANING; SPUTTER GAS; STRUCTURAL CHANGE;

ALUMINUM; ALUMINUM COATINGS; ALUMINUM NITRIDE; ARGON; BINDING ENERGY; CHEMICAL SHIFT; COMPOSITE FILMS; GOLD COATINGS; METALLIC FILMS; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GOLD;

EID: 83555174589     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3765     Document Type: Article

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