Electronic and structural properties of implanted xenon in amorphous silicon

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Barbieri, P F ^a   Landers, R ^a   Marques, F C ^a  

^a UNIVERSITY OF CAMPINAS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; AUGER ELECTRON SPECTROSCOPY; ELECTRONIC PROPERTIES; FILM GROWTH; STRUCTURAL PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

IMPLANTATION ENERGY; RELAXATION ENERGY; XENON ATOMS;

XENON;

EID: 34247340988     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2723072     Document Type: Article

References (27)

1. C. J. Allègre, T. Staudacher, and P. Sarda, Earth Planet. Sci. Lett. 81, 127 (1987).
2. M. Keyes, T. Pickles, A. Agranovich, W. Kwan, and W. J. Morris, Int. J. Radiat. Oncol., Biol., Phys. 60, 40 (2004).
3. J. E. Kalinyak and I. R. McDougall, Nucl. Med. Commun. 25, 883 (2004).
4. S. Neubauer, P. Derakhshani, K. Muskalla, J. Metz, and G. Spira, Radiother. Oncol. 71, S44 (2004).
5. M. Schmidt, T. Marx, E. Glöggl, H. Reinelt, and U. Schirmer, Anesthesiology 102, 929 (2005).
6. M. Werner, J. A. van den Berg, D. G. Armour, G. Carter, T. Feudel, M. Herden, M. Bersani, D. Giubeitoni, L. Ottaviano, C. Bongiorno, G. Mannino, P. Bailey, and T. C. Q. Noakes, Appl. Phys. Lett. 86, 151904 (2005).
7. E. Kim, M. Nicol, H. Cynn, and C. S. Yoo, Phys. Rev. Lett. 96, 035504 (2006).
8. H. Cynn, C. S. Yoo, B. Baer, V. Iota-Herbei, A. K. McMahan, M. Nicol, and S. Carlson, Phys. Rev. Lett. 86, 4552 (2001).
9. R. C. Birtcher, S. E. Donnelly, M. Song, K. Furuya, K. Mitsuishi, and C. W. Allen, Phys. Rev. Lett. 83, 1617 (1999).
10. H. W. Biester, M. J. Besnard, G. Dujardin, L. Hellner, and E. E. Koch, Phys. Rev. Lett. 59, 1277 (1987).
11. Y. Ito, A. M. Vlaicu, T. Tochio, T. Mukoyama, M. Takahashi, S. Emura, and Y. Azuma, Phys. Rev. A 57, 873 (1998).
12. I. Arčon, A. Kodre, M. Štuhec, and D. Glavič-Cindro, Phys. Rev. A 51, 147 (1995).
13. K. Zhang, E. A. Stern, J. J. Rehr, and F. Ellis, Phys. Rev. B 44, 2030 (1991).
14. K. A. Goettel, J. H. Eggert, and I. F. Silvera, Phys. Rev. Lett. 62, 665 (1989).
15. M. Ross, R. Boehler, and P. Söderlind, Phys. Rev. Lett. 95, 257801 (2005).
16. Y. Babba, H. Yamamoto, and T. A. Sasaki, Surf. Sci. 287, 806 (1993).
17. Y. Babba, H. Yamamoto, and T. A. Sasaki, Nucl. Instrum. Methods Phys. Res. B 66, 424 (1992).
18. P. H. Citrin and D. R. Hamann, Phys. Rev. B 10, 4948 (1974).
19. A. vom Felde, J. Fink, T. Müller-Heinzerling, J. Pflüger, B. Scheerer, and G. Linker, Phys. Rev. Lett. 53, 922 (1984).
20. G. Faraci, A. R. Pennisi, and A. Terrasi, Phys. Rev. B 38, 13468 (1988).
21. M. G. Norton, E. L. Fleischer, W. Hertl, C. B. Carter, and J. W. Mayer, Phys. Rev. B 43, 9291 (1991).
22. D. Briggs and M. P. Seah, Practical Surface Analysis, 2nd ed. (Wiley, New York, 1993), Vol. 1.
23. A. A. Bakke, H.-W. Chen, and W. L. Jolly, J. Electron Spectrosc. Relat. Phenom. 20, 333 (1980).
24. C. D. Wagner, Faraday Discuss. Chem. Soc. 60, 291 (1975).
25. C. I. Ukah, R. V. Kruzelecky, D. Racansky, and S. Zukotynski, J. Non-Cryst. Solids 103, 131 (1988).
26. P. F. Barbieri, M. H. de Oliveira, Jr., A. Champi, and F. C. Marques, J. Non-Cryst. Solids 352, 1016 (2006).
27. D. C. Craigen and D. E. Brodie, J. Phys.: Condens. Matter 4, 9843 (1992).