Quantum confinement effects and band gap engineering of SnO 2 nanocrystals in a MgO matrix

Acta Materialia

Volumn 60, Issue 3, 2012, Pages 1072-1078

  Sahana, M B ^a   Sudakar, C ^a   Dixit, A ^a   Thakur, J S ^a   Naik, R ^a   Naik, V M ^b  

^a WAYNE STATE UNIVERSITY   (United States)

^b UNIVERSITY OF MICHIGAN DEARBORN   (United States)

Author keywords

Band gap engineering; Nanocrystalline films; Quantum confinement; SnO 2 MgO composite thin films

Indexed keywords

ANNEALING CONDITION; ANNEALING TEMPERATURES; BAND GAP ENGINEERING; COMPOSITE THIN FILMS; GENERIC APPROACH; MATRIX; NANO-PHASE; NANOCOMPOSITE SYSTEMS; NANOCRYSTAL FORMATION; NANOCRYSTALLINE COMPOSITE; NANOCRYSTALLINE FILMS; QUANTUM CONFINEMENT EFFECTS; WIDE ENERGY RANGE;

ENERGY GAP; NANOCOMPOSITES; NANOCRYSTALS; QUANTUM CONFINEMENT; THIN FILMS;

COMPOSITE FILMS;

EID: 83455245142     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2011.11.012     Document Type: Article

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