Contact effects in high performance fully printed p-channel organic thin film transistors

Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

  Valletta, A ^a   Daami, A ^b   Benwadih, M ^b   Coppard, R ^b   Fortunato, G ^a   Rapisarda, M ^a   Torricelli, F ^c   Mariucci, L ^a  

^a CNR   (Italy)

^b CEA GRENOBLE   (France)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LOWERING; CHANNEL APPROXIMATION; CHANNEL LENGTH; CONTACT EFFECT; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; IV CHARACTERISTICS; LONG CHANNEL TRANSISTORS; ORGANIC THIN FILM TRANSISTORS; SCHOTTKY DIODES; SCHOTTKY EFFECT; SOURCE-DRAIN VOLTAGE;

CURRENT VOLTAGE CHARACTERISTICS; SCHOTTKY BARRIER DIODES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 83455228503     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3669701     Document Type: Article

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