Transmission electron microscopy and transistor characteristics of the same carbon nanotube

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2911-2913

  Meyer, Jannik C ^a   Obergfell, Dirk ^a   Roth, Siegmar ^a   Yang, Shine ^b   Yang, Shangfeng ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BINDING ENERGY; ELECTRON BEAMS; ELECTRON TRANSPORT PROPERTIES; FIELD EFFECT TRANSISTORS; FULLERENES; HIGH RESOLUTION ELECTRON MICROSCOPY; LASER ABLATION; TRANSMISSION ELECTRON MICROSCOPY;

AMBIPOLAR TRANSPORT; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SINGLE TUBES; SINGLE-WALLED CARBON NANOTUBE (SWNT);

CARBON NANOTUBES;

EID: 8344282816     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1805701     Document Type: Article

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