Modeling of drain current characteristics of SOI MOSFETs using neural networks

Proceedings of the International Conference on Microelectronics, ICM

Volumn 2002-January, Issue , 2002, Pages 114-117

  Hatami, S ^a   Azizi, M Y ^a   Bahrami, H R ^a   Motavalizadeh, D ^a   Afzali Kusha, A ^a  

^a UNIVERSITY OF TEHRAN   (Iran)

Author keywords

Artificial neural networks; Circuit simulation; Computational modeling; Computer architecture; Equations; MOSFETs; Neural networks; Neurons; Silicon on insulator technology; Voltage

Indexed keywords

CIRCUIT SIMULATION; COMPUTER ARCHITECTURE; DRAIN CURRENT; ELECTRIC POTENTIAL; MICROELECTRONICS; MOSFET DEVICES; NETWORK ARCHITECTURE; NEURAL NETWORKS; NEURONS; RADIAL BASIS FUNCTION NETWORKS;

COMPUTATIONAL MODEL; CURRENT CHARACTERISTIC; EQUATIONS; GENERALIZED RADIAL BASIS FUNCTIONS; MOSFETS; MULTI LAYER PERCEPTRON; NEURAL NETWORK MODEL; TRAINING EFFICIENCY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 8344236582     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICM-02.2002.1161509     Document Type: Conference Paper

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