Temperature effects and long term fading of implanted and unimplanted gate oxide RADFETs

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 III, 2004, Pages 2917-2921

  Haran, Avner ^a   Jakšić, Aleksandar ^b   Refaeli, Nati ^a   Eliyahu, Avraham ^a   David, David ^a   Barak, Joseph ^a  

^a SOREQ NUCLEAR RESEARCH CENTER   (Israel)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Dosimetry; Fading; PMOS dosimeters; RADFETs

Indexed keywords

ANNEALING; COBALT; DOSIMETERS; DOSIMETRY; ION IMPLANTATION; MOS DEVICES; RADIATION EFFECTS; THERMAL EFFECTS;

GATE OXIDES; PMOS DOSIMETERS; RADFETS; RADIATION SENSITIVE FIELD EFFECT TRANSISTORS (RADFET);

FIELD EFFECT TRANSISTORS;

EID: 8344261740     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835065     Document Type: Article

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