Dose-Depth and SEU monitors for the STRV-lc satellite

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2765-2770

  Thomson, I ^a   Hartshorn, L ^b   Brown, M ^c   Adams, L ^d  

^a Thomson and Nielscn Electronics Ltd   (Canada)

^b EUROPEAN SPACE AGENCY   (Netherlands)

^c CANADIAN SPACE AGENCY   (Canada)

^d DEFENCE RESEARCH AND DEVELOPMENT CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC EQUIPMENT; INTERFACES (COMPUTER); PROTON IRRADIATION; RADIATION DAMAGE; RADIATION HARDENING; RADIATION HAZARDS; SATELLITES; SPACECRAFT INSTRUMENTS;

DOSE DEPTH MONITORS; SINGLE EVENT UPSETS (SEU);

DOSIMETERS;

EID: 0032318959     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736526     Document Type: Article

References (13)

1. R.J. Blott, Cdr RN, N.S. Wells, J. EvesThe STRV-1 Microsatellite Series: Exploiting the Geosynchronous Transfer Orbit," 1997.
2. R. Harboe-Sorensen, EJ. Daly, C.I. Underwood, J. Ward and L. AdamsThe behavior of SEU at low altitude during periods of high solar activity," IEEE Trans. Nuclear Sei. NS-27, No. 6, p. 1938, 1990.
3. W.L. Bendel and E.L. PetersenProton upsets in orbit," IEEE Trans. Nuclear Sei. NS-30, No. 6, p. 4493, 1983.
4. L. Adams, E.J. Daly, R. Harboe-Sorensen, R. Nickson, J. Haines, W. Schafer, M. Conrad, H. Griech, T. Scwall, R. HenneckA verified proton induced latch-up in space," IEEE Trans. Nuclear Sei. NS-39, No. 6, p. 1804, 1992.
5. C. I. Underwood The Single-Event-Effect Behaviour of Commercial-Off-The-Shelf Memory Devices - A Decade in Low-Earth Orbit," IEEE Trans. Nuclear Sei., NS-45, No. 3, pp 1450 -1457, 1998.
6. G.F. MacKay, I. Thomson, A. Ng and N. SultanApplications of MOSFET Dosimeters on MIR and BION Satellite," IEEE Trans. Nuclear Sei., NS-44, No. 6, pp 2048-2051, 1997.
7. G.F. MacKay, I. Thomson, L.Adams, R. Nickson, A. Ng, and N. Sultan An Instrument for Measuring Proton-Induced Upsets in Space Electronics," Proceedings, 1997 Fourth Conference on Radiation and its Effects on Components and Systems, RADECS 97, pp 495 - 498, September, 1997.
8. DERA FarnboroughDose Depth Monitor Interface Control Document", Document ICD/PL/SPEC/0120, DERA Farnborough, 1998.
9. A. Bogorad, C. Bowman, A. Dennis, J. Beck, D.Lang, R. Herschitz, M. Buehler, B. Blaes and D. MartinIntegrated Environmental System for Spacecraft," IEEE Trans. Nuclear Sei., Vol. 42, pp 2051-2057, 1995.
10. M. Soubra, J.Cygler and G. MackayEvaluation of a dual bias dual metal oxide silicon semiconductor field effect transistor as radiation dosimeter," Med. Phys., Vol. 24, pp 567-572, 1994.
11. W.J. Stapor, J.P. Meyers, J.B. Langworthy, and E.L. PetersenTwo Parameter Model Calculations for Predicting Proton Induced Upsets," IEEE Trans. Nuclear Sei., NS-37, p 1966, 1990.
12. E. Normand, D.L. Oberg, J.L. Wert, J.D. Ness and P.P. MajewskiSingle event upset and charge collection measurements using high energy protons and neutrons," IEEE Trans. Nuclear Sei., NS-41, No.6, p. 2203,1994.
13. R.K. Freitag and D.E. BrownLow Dose Rate Effects in Linear Bipolar IC's: Experiments on the Time Dependence," IEEE Trans. Nuclear Sei., NS-44, No. 6, pp 1906-1913, 1997.