Magnetocurrent in a bipolar spin transistor at room temperature

Applied Physics Letters

Volumn 85, Issue 14, 2004, Pages 2959-2961

  Huang, Y W ^a   Lo, C K ^b   Yao, Y D ^c   Hsieh, L C ^b   Ju, J J ^b   Huang, D R ^b   Huang, J H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; CIRCUIT THEORY; COERCIVE FORCE; GIANT MAGNETORESISTANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON WAFERS;

GIANT MAGNETORESISTANCE EMITTER; MAGNETOCURRENT RATIO (MCR); SPIN TRANSISTOR (ST); SPIN TUNNELING TRANSISTOR;

BIPOLAR TRANSISTORS;

EID: 8344255817     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1796522     Document Type: Article

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