Electronic excitation induced controlled modifications of semiconductor-to-metal transition in epitaxial VO2 thin films

Journal of Materials Research

Volumn 26, Issue 23, 2011, Pages 2901-2906

  Gupta, Alok ^a   Singhal, Rahul ^b   Narayan, Jagdish ^a   Avasthi, Devesh K ^b  

^a North Carolina State University   (United States)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

Ion solid interactions; Metal insulator transition; Radiation effects

Indexed keywords

CONTROLLED MODIFICATION; DEFECT STATE; DISORDERED REGIONS; ELECTRICAL MEASUREMENT; ELECTRICAL RESISTIVITY MEASUREMENTS; ELECTRONIC EXCITATION; ELECTRONIC STOPPING; FIRST-ORDER; HIGH ENERGY; INFRARED TRANSMISSION SPECTROSCOPY; ION FLUENCES; ION-SOLID INTERACTIONS; LOCALIZED DEFECTS; LOW TEMPERATURES; NUCLEAR STOPPING; SECOND ORDER TRANSITION; SEMICONDUCTOR-TO-METAL TRANSITIONS; SWIFT HEAVY IONS; THICKNESS OF THE FILM; VERY HIGH ENERGIES;

DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; HEAVY IONS; IRRADIATION; METAL INSULATOR BOUNDARIES; RADIATION EFFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GOLD;

EID: 82955239840     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2011.392     Document Type: Article

References (22)

1. F.J. Morin: Oxides which show a metal-to-insulator transition at the Neel temperature. Phys. Rev. Lett. 3, 34 (1959).
2. J. Nag and R.F. Haglund Jr.: Synthesis of vanadium dioxide thin films and nanoparticles. J. Phys. Condens. Matter. 20, 264016 (2008).
3. J. Narayan and V. Bhosle: Phase transition and critical issues in structure-property correlations of vanadium oxide. J. Appl. Phys. 100, 103524 (2006).
4. C.H. Griffiths and H.K. Eastwood: Influence of stoichiometry on metal-semiconductor transition in vanadium dioxide. J. Appl. Phys. 45, 2201 (1974).
5. 2 thin films grown on c- and r-sapphire substrates. J. Appl. Phys. 107, 053514 (2010).
6. 2 thin films grown epitaxially on Si (001). Appl. Phys. Lett. 95, 11915 (2009).
7. 2 films. J. Vac. Sci. Technol. A 2(4), 1509 (1984).
8. 2 thin films. J. Vac. Sci. Technol. A 7(3), 1194 (1989).
9. A. Leone, A.M. Trione, and F. Junga: Alteration in electrical and infrared switching properties of vanadium oxides due to proton irradiation. IEEE Trans. Nucl. Sci. 37(6), 1739 (1990).
10. 2 thin films changed by high flux electron beam radiation. Surf. Coat. Technol. 158-159, 530 (2002).
11. M.A. Nastasi, J.W. Mayer, and J.K. Hirvonen: Ion-Solid Interactions: Fundamentals and Applications (Cambridge University Press, Cambridge, England, 1996), p. 141.
12. J.F. Ziegler, P. Biersack, and U. Littmark: Stopping and Ranges of Ions in Matter (Pergamon, New York, 1985).
13. M. Toulemonde, J.M. Constantini, C. Dufour, A.Meftah, E. Paumier, and F. Studer: Track creation in SiO. Nucl. Instrum. Methods Phys. Res. B 116, 37 (1996).
14. D.K. Avasthi, W. Assmann, H. Notle, H.D. Mieskes, S. Ghosh, and N.C. Mishra: Transport of oxygen atoms mediated by electronic excitation. Nucl. Instrum. Methods Phys. Res. B 166, 345 (2000).
15. 2. Physica B 316, 600 (2002).
16. 3 thin films generated heat-treated in hydrogen atmosphere. Jpn. J. Appl. Phys. 47, 7510 (2008).
17. 2 single crystals: A study of the effects of surface oxidation. Phys. Rev. B 42(5), 3164 (1990).
18. A.Z. Moshfegh and A. Ignatiev: Formation and characterization of thin film vanadium oxides: Auger electron spectroscopy, x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy, and optical reflectance studies. Thin Solid Films 198, 251 (1991).
19. G.A. Sawatzky and D. Post: X-ray photoelectron and Auger spectroscopy study of some vanadium oxides. Phys. Rev. B 20, 1546 (1979).
20. V.A. Klimov, I.O. Timofeeva, S.D. Khanin, E.B. Shadrin, A.V. Il'inskiÏ, and F. Silva-Andrade: Effect of crystallization of amorphous vanadium dioxide films on the parameters of a semiconductor-metal phase transition. Semiconductors 37, 370 (2003).
21. C. Ko and S. Ramanathan: Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxidesemiconductor device geometry. Appl. Phys. Lett. 93, 252101 (2008).
22. 2. Solid State Commun. 15, 1645 (1974).