Raman spectroscopy study of oxygen vacancies in PbTiO3 thin films generated heat-treated in hydrogen atmosphere

Japanese Journal of Applied Physics

Volumn 47, Issue 9 PART 2, 2008, Pages 7510-7513

  Nishida, Ken ^a   Osada, Minoru ^b   Takeuchi, Hironari ^c   Yosiaki, Ishimoto ^c   Sakai, Joe ^d   Ito, Nobuaki ^e   Ikariyama, Rikyu ^f   Kamo, Takafumi ^f   Fujisawa, Takashi ^f   Funakubo, Hiroshi ^f   Katoda, Takashi ^c   Yamamoto, Takashi ^a  

^a NATIONAL DEFENSE ACADEMY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c KOCHI UNIVERSITY OF TECHNOLOGY   (Japan)

^d UNIVERSITÉ DE TOURS   (France)

^e JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^f TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Heat treatment; Oxygen vacancy; PaTiO3 thin film; Pb vacancy; Raman spectroscopy

Indexed keywords

ELECTROLYSIS; HEAT TREATING FURNACES; HEAT TREATMENT; HYDROGEN; IONS; LEAD; LEAD ALLOYS; NONMETALS; OXYGEN; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SOLIDS; SPECTRUM ANALYSIS; THICK FILMS; THIN FILMS; VACANCIES; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES;

HEAT TREATMENT TEMPERATURES; HYDROGEN ATMOSPHERES; LOWER FREQUENCIES; OXYGEN IONS; PATIO3 THIN FILM; PB IONS; PB VACANCY; ION CONTENTS;

OXYGEN VACANCIES;

EID: 55149090919     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7510     Document Type: Article

References (17)

1. J. S. Wrigh and L. F. Francis: J. Mater. Res, 8 (1993) 1712.
2. J. F. Scott and C. A. Araujo: Science 246 (1989) 1400.
3. K. Ohtani, M. Okuyama, and Y. Hamakawa: Proc. 4th Symp. Ultrasonic Electronics, Tokyo, 1983, Jpn. J. Appl. Phys. 23 (1984) Suppl. 23-1, p. 133.
4. M. Okuyama, H. Seto, M. Kojima, Y. Matsui, and Y. Hamakawa: Proc. 14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982, Jpn. J. Appl. Phys. 22 (1983) Suppl. 22-1, p. 465.
5. R. Takayama, Y. Tomita, K. Iijima, and T. Ueda: J. Appl. Phys. 63 (1988) 5868.
6. N. Ikarashi: Appl. Phys. Lett. 73 (1998) 1955.
7. S. Zafar, V. Kaushik, P. Laberge, P. Chu, R. E. Jones, R. L. Hance, P. Zurcher, B. E. White, D. Taylor, B. Melnick, and S. Gillespie: J. Appl. Phys. 82 (1997) 4469.
8. T. Tamura, K. Matsuura, H. Ashida, K. Kondo, and S. Otani: Appl. Phys. Lett. 74 (1999) 3395.
9. K. Kushida-Abdelghafar, H. Miki, K. Torii, and Y. Fujisaki: Appl. Phys. Lett. 69 (1996) 3188.
10. J.-P. Han and T. P. Ma: Appl. Phys. Lett. 71 (1997) 1267.
11. S. Shirasaki, K. Takahashi, H. Yamamura, K. Kakegawa, and J. Mori: J. Solid State Chem. 12 (1975) 84.
12. J. Sakai, N. Ito, S. Ito, K. Takahashi, and H. Funakubo: Appl. Phys. Lett. 89 (2006) 242115.
13. M. Osada, M. Kakihana, S. Wada, and T. Noma: Appl. Phys. Lett. 75 (1999) 3393.
14. K. Nishida, M. Osada, H. Uchida, H. Nakaki, S. Koda, H. Funakubo, and T. Katoda: Jpn. J. Appl. Phys. 45 (2006) 7548.
15. G. Burns and B. A. Scott: Phys. Rev. B 7 (1973) 3088.
16. C. M. Foster, Z. Li, M. Grimsditch, S.-K. Chen, and D. J. Lam: Phys. Rev. B 48 (1993) 10160.
17. J. D. Freire and R. S. Katiyar: Phys. Rev. B 37 (1988) 2074.