High open-circuit voltage and its low temperature coefficient in crystalline germanium solar cells using a heterojunction structure with a hydrogenated amorphous silicon thin layer

Japanese Journal of Applied Physics

Volumn 50, Issue 12, 2011, Pages

  Kaneko, Tetsuya ^a   Kondo, Michio ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; CRYSTALLINE GERMANIUM; HETEROJUNCTION SOLAR CELLS; HETEROJUNCTION STRUCTURES; HIGH TEMPERATURE; HOMOJUNCTION; HYDROGENATED AMORPHOUS SILICON (A-SI:H); I-LAYER; LOW TEMPERATURE COEFFICIENTS; SUN ILLUMINATION; SURFACE PASSIVATION; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE; THIN LAYERS;

CRYSTALLINE MATERIALS; GERMANIUM; HETEROJUNCTIONS; HYDROGENATION; OPEN CIRCUIT VOLTAGE; SILICON;

AMORPHOUS SILICON;

EID: 82955221730     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.120204     Document Type: Article

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