Effect of Ga doping on micro/structural, electrical and optical properties of pulsed laser deposited ZnO thin films

Thin Solid Films

Volumn 520, Issue 4, 2011, Pages 1212-1217

  Shinde, S D ^a   Deshmukh, A V ^a,c   Date, S K ^a   Sathe, V G ^b   Adhi, K P ^a  

^a UNIVERSITY OF PUNE   (India)

^b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

^c Department of Instrumentation & Control Engineering   (India)

Author keywords

Metal semiconductor transition (MST); Pulsed laser deposition (PLD); Raman studies; Zinc oxide (ZnO)

Indexed keywords

BURSTEIN-MOSS EFFECTS; DOPING CONCENTRATION; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL RESISTIVITY MEASUREMENTS; GA DOPING; GA-DOPED ZNO; HOST LATTICE; METAL-SEMICONDUCTOR TRANSITIONS; METAL-TO-SEMICONDUCTOR TRANSITION; MICRO-RAMAN SCATTERING; RAMAN STUDIES; RESIDUAL COMPRESSIVE STRESS; SINGLE PHASE; TEMPERATURE RANGE; TRANSLATIONAL SYMMETRY; WAVE NUMBERS; WURTZITE STRUCTURE; X-RAY DIFFRACTION STUDIES; ZNO; ZNO THIN FILM;

DEFECTS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE; ZINC SULFIDE;

PULSED LASERS;

EID: 82755193747     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.06.094     Document Type: Conference Paper

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