Improved light extraction efficiency of GaN-based light emitting diodes using one and two interfaces of ITO/ZnO layer texturing

Materials Science in Semiconductor Processing

Volumn 13, Issue 5-6, 2010, Pages 329-332

  Uthirakumar, Periyayya ^a   Kang, Ji Hye ^b   Ryu, Beo Deul ^b   Hong, Chang Hee ^b  

^a SONA COLLEGE OF TECHNOLOGY   (India)

^b Chonbuk National University   (South Korea)

Author keywords

Indium tin oxide; Light emitting diodes; Nanomaterials; Zinc oxide

Indexed keywords

CURRENT INJECTIONS; DEVICE STRUCTURES; GAN BASED LED; INDIUM TIN OXIDE; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; MULTIPLE LIGHT SCATTERING;

DIODES; EFFICIENCY; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM COMPOUNDS; LIGHT EMISSION; TIN; TIN OXIDES; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 82455212102     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2011.02.015     Document Type: Article

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