Gettering in multicrystalline silicon wafers with screen-printed emitters

Progress in Photovoltaics: Research and Applications

Volumn 19, Issue 8, 2011, Pages 946-953

  Pletzer, T M ^a   Stegemann, E F R ^a,b   Windgassen, H ^a   Suckow, S ^a   Batzner D L ^a,c   Kurz, H ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b OT Thalheim ^*  (Germany)

^c Roth and Rau Switzerland AG   (Switzerland)

Author keywords

gettering; multicrystalline silicon; screen printing

Indexed keywords

GETTERING; MINORITY CARRIER LIFETIMES; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON WAFERS; QUASI-STEADY-STATE PHOTOCONDUCTANCE; RECOMBINATION CURRENTS; SCREEN-PRINTED; SCREEN-PRINTING PROCESS; SOLAR CELL PARAMETERS;

CARRIER LIFETIME; PHOSPHORUS; POLYSILICON; SCREEN PRINTING; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 82355182866     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1099     Document Type: Article

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