Lasing action on whispering gallery mode of self-organized GaN hexagonal microdisk crystal fabricated by RF-plasma-assisted molecular beam epitaxy

IEEE Journal of Quantum Electronics

Volumn 47, Issue 12, 2011, Pages 1565-1570

  Kouno, Tetsuya ^a,b   Kishino, Katsumi ^a,b   Sakai, Masaru ^a,b  

^a SOPHIA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

GaN microdisk; microcavity lasers; radio frequency molecular beam epitaxy; whispering gallery mode

Indexed keywords

EXCITATION DENSITY; GAN SUBSTRATE; LASER ACTION; LASING ACTION; LASING WAVELENGTH; M-PLANE; MICROCAVITY LASER; MICRODISKS; NANO-COLUMNS; ND : YAG LASERS; OPTICAL EXCITATIONS; OPTICALLY PUMPED; PLANE WAVE; Q-FACTORS; ROOM TEMPERATURE; SIDE LENGTH; TIME-DOMAIN METHODS; ULTRAVIOLET LASING; WHISPERING GALLERY MODES;

EPITAXIAL GROWTH; FINITE DIFFERENCE TIME DOMAIN METHOD; GALLIUM NITRIDE; LASER EXCITATION; NEODYMIUM LASERS; OPTICALLY PUMPED LASERS; PUMPING (LASER); RADIO; RADIO WAVES; TIME DOMAIN ANALYSIS; ULTRAVIOLET LASERS;

MOLECULAR BEAM EPITAXY;

EID: 82155171293     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2011.2175369     Document Type: Article

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