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Volumn 32, Issue 12, 2011, Pages 1650-1652

Memristor logic operation gate with share contact RRAM cell

Author keywords

Contact resistive random access memory (CRRAM); Latch; Logic gate

Indexed keywords

LATCH; LOGIC OPERATIONS; MEMRISTOR; NEW APPLICATIONS; NON-VOLATILE; RESISTIVE RANDOM ACCESS MEMORY; SINGLE TRANSISTORS;

EID: 81855194329     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2167313     Document Type: Article
Times cited : (9)

References (12)
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  • 3
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    • Versace, M.1    Chandler, B.2
  • 4
    • 77951026760 scopus 로고    scopus 로고
    • Nanoscale memristor device as synapse in neuromorphic systems
    • Apr.
    • S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, "Nanoscale memristor device as synapse in neuromorphic systems," Nano Lett., vol. 10, no. 4, pp. 1297-1301, Apr. 2010.
    • (2010) Nano Lett. , vol.10 , Issue.4 , pp. 1297-1301
    • Jo, S.H.1    Chang, T.2    Ebong, I.3    Bhadviya, B.B.4    Mazumder, P.5    Lu, W.6
  • 5
    • 84861199525 scopus 로고    scopus 로고
    • Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis
    • DOI: 10.1109/TVLSI.2011.2136443, to be published
    • W. Fei, H. Yu, W. Zhang, and K. S. Yeo, "Design exploration of hybrid CMOS and memristor circuit by new modified nodal analysis," IEEE Trans. Very Large Scale Integr. (VLSI) Syst., 2011, DOI: 10.1109/TVLSI.2011. 2136443, to be published.
    • IEEE Trans. Very Large Scale Integr. (VLSI) Syst. , vol.2011
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    • Mar.
    • C. H. Cheng, A. Chin, and F. S. Yeh, "Ultralow switching energy Ni/GeOx/HfON/TaN RRAM," IEEE Electron Device Lett., vol. 32, no. 3, pp. 366-368, Mar. 2011.
    • (2011) IEEE Electron Device Lett. , vol.32 , Issue.3 , pp. 366-368
    • Cheng, C.H.1    Chin, A.2    Yeh, F.S.3
  • 10
    • 79951816863 scopus 로고    scopus 로고
    • High density and ultra small cell size of contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits
    • Y. H. Tseng, C.-E. Huang, C.-H. Kuo, Y.-D. Chih, and C. J. Lin, "High density and ultra small cell size of contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits," in IEDM Tech. Dig., 2009, pp. 109-112.
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  • 12
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    • A new high-density and ultra small-cell-size contact RRAM (CR-RAM) with fully CMOS-logic-compatible technology and circuits
    • Jan.
    • Y. H. Tseng, C.-E. Huang, C.-H. Kuo, Y.-D. Chih, Y.-C. King, and C. J. Lin, "A new high-density and ultra small-cell-size contact RRAM (CR-RAM) with fully CMOS-logic-compatible technology and circuits," IEEE Trans. Electron Devices, vol. 58, no. 1, pp. 53-58, Jan. 2011.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.