Modeling and Simulation of a High-Temperature SiC JFET/JBS Power Electronics Building Block

Grand Challenges in Modeling and Simulation Symposium 2009, GCMS 2009 - Part of the 2009 Summer Simulation Multiconference, SummerSim 2009

Volumn , Issue , 2009, Pages 308-314

  Chen, Zheng ^a   Ning, Puqi ^a   Boroyevich, Dushan ^a   Wang, Fred ^a   Jiang, Dong ^a   Burgos, Rolando ^a   Ngo, Khai D T ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

Power Electronics Building Block (PEBB); SiC JFET

Indexed keywords

CAPACITANCE; CIRCUIT SIMULATION; COMPUTER AIDED ANALYSIS; HIGH TEMPERATURE APPLICATIONS; JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER ELECTRONICS;

BODY DIODE; ELECTRICAL MODELING; HIGH-TEMPERATURE APPLICATION; HIGHEST TEMPERATURE; IMPORTANT FEATURES; JUNCTION BARRIER SCHOTTKY; MODEL AND SIMULATION; POWER ELECTRONIC BUILDING BLOCK; POWER ELECTRONICS BUILDING BLOCKS; SILICON CARBIDE JFET;

SILICON CARBIDE;

EID: 81855190320     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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