Temperature-independent hole mobility in field-effect transistors based on liquid-crystalline semiconductors

IEICE Transactions on Electronics

Volumn E94-C, Issue 11, 2011, Pages 1720-1726

  Funahashi, Masahiro ^a   Zhang, Fapei ^b   Tamaoki, Nobuyuki ^c  

^a KAGAWA UNIVERSITY   (Japan)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Carrier transport; Field effect mobility; Field effect transistor; Liquid crystalline semiconductor; Phenylterthiophene

Indexed keywords

CARRIER TRANSPORT; CRYSTALLINE MATERIALS; HOLE MOBILITY; LIQUIDS; THIN FILM TRANSISTORS; TRANSISTORS;

FIELD-EFFECT MOBILITIES; IN-FIELD; LIQUID CRYSTALLINE; LIQUID CRYSTALLINE SEMICONDUCTOR; PHENYLTERTHIOPHENE; SPIN-COATING METHOD; TEMPERATURE INDEPENDENTS; TEMPERATURE RANGE;

FIELD EFFECT TRANSISTORS;

EID: 81255207069     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1587/transele.E94.C.1720     Document Type: Article

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