Device characteristics for Pt-Ti-O gate Si-MISFETs hydrogen gas sensors

Sensors and Actuators, B: Chemical

Volumn 160, Issue 1, 2011, Pages 105-114

  Usagawa, Toshiyuki ^a,b   Kikuchi, Yota ^a  

^a HITACHI LTD   (Japan)

^b Central Research Laboratory   (Japan)

Author keywords

Device characteristics; Hydrogen gas sensors; Oxygen invasion; Pt Ti O; Pt Ti gate; Si MOSFET; Threshold voltage

Indexed keywords

ANNEALING CONDITION; AS-GROWN; DEVICE CHARACTERISTICS; GATE STRUCTURE; HYDROGEN CONCENTRATION; HYDROGEN EXPOSURE; HYDROGEN GAS SENSORS; HYDROGEN SAFETY; HYDROGEN SENSOR; MIXING LAYERS; NANOCRYSTALLINE TIO; OXIDATION MODEL; OXIDATION PROCESS; OXYGEN-DOPED; PT-TI-O; SENSING AMPLITUDE; SI-MOSFET;

AMORPHOUS SILICON; CHEMICAL SENSORS; GAS DETECTORS; GRAIN BOUNDARIES; HYDROGEN; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; OXYGEN; PLATINUM; PLATINUM ALLOYS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THRESHOLD VOLTAGE; TITANIUM;

SEMICONDUCTING SILICON;

EID: 81155131063     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2011.07.020     Document Type: Article

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