Temperature-dependent photoconductance of heavily doped ZnO nanowires

Nano Research

Volumn 4, Issue 11, 2011, Pages 1110-1116

  Li, Dongdong ^a   Zhao, Liang ^a   Wu, Ruqian ^b   Ronning, Carsten ^c   Lu, Jia G ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

doping; impurity states; nanowire; photoconductance; semiconductor to metal transition; ZnO

Indexed keywords

EID: 80955144456     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-011-0158-1     Document Type: Article

References (34)

1. Lu, J. G.; Chang, P. C.; Fan, Z. Y. Quasi-one-dimensional metal oxide materials-Synthesis, properties and applications. Mater. Sci. Eng. R. 2006, 52, 49-91.
2. Hoyer, P.; Weller, H. Potential-dependent electron injection in nanoporous colloidal ZnO films. J. Phys. Chem. 1995, 99, 14096-14100.
3. Hotchandani, S.; Kamat, P. V. Photoelectrochemistry of semiconductor ZnO particulate Films. J. Electrochem. Soc. 1992, 139, 1630-1634.
4. Ju, S.; Li, J. Y.; Pimparkar, N.; Alam, M. A.; Chang, R. P. H.; Janes, D. B. N-type field-effect transistors using multiple Mg-doped ZnO nanorods. IEEE T Nanotechnol. 2007, 6, 390-395.
5. Pan, H.; Zhu, Y. W.; Sun, H.; Feng, Y. P.; Sow, C. H.; Lin, J. Y. Electroluminescence and field emission of Mg-doped ZnO tetrapods. Nanotechnology2006, 17, 5096-5100.
6. Yuan, G. D.; Zhang, W. J.; Jie, J. S.; Fan, X.; Tang, J. X.; Shafiq, I.; Ye, Z. Z.; Lee, C. S.; Lee, S. T. Tunable n-type conductivity and transport properties of Ga-doped ZnO nanowire arrays. Adv. Mater. 2008, 20, 168-173.
7. Bae, S. Y.; Na, C. W.; Kang, J. H.; Park, J. Comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation. J. Phys. Chem. B2005, 109, 2526-2531.
8. Thompson, R. S.; Li, D.; Witte, C. M.; Lu, J. G. Weak localization and electron-electron interactions in indium-doped ZnO nanowires. Nano Lett. 2009, 9, 3991-3995.
9. He, H.; Lao, C. S.; Chen, L. J.; Davidovic, D.; Wang, Z. L. Large-scale Ni-doped ZnO nanowire arrays and electrical and optical properties. J. Amer. Chem. Soc. 2005, 127, 16376-16377.
10. Yamamoto, T.; Katayama-Yoshida, H. Solution using a codoping method to unipolarity for the fabrication of p-type ZnO. Jpn. J. Appl. Phys. Part 21999, 38, L166-L169.
11. Salfi, J.; Philipose, U.; Aouba, S.; Nair, S. V.; Ruda, H. E. Electron transport in degenerate Mn-doped ZnO nanowires. Appl. Phys. Lett. 2007, 90, 032104.
12. Liang, W. J.; Yuhas, B. D.; Yang, P. D. Magnetotransport in Co-doped ZnO nanowires. Nano Lett. 2009, 9, 892-896.
13. Duan, X. F.; Lieber, C. M. General synthesis of compound semiconductor nanowires. Adv. Mater. 2000, 12, 298-302.
14. Chang, P. C.; Fan, Z.; Chien, C. J.; Stichtenoth, D.; Ronning, C.; Lu, J. G. High-performance ZnO nanowire field effect transistors. Appl. Phys. Lett. 2006, 89, 133113.
15. Thompson, R. S.; Li, D. D.; Witte, C. M.; Lu, J. G. Weak localization and electron-electron interactions in indium-doped ZnO nanowires. Nano Lett. 2009, 9, 3991-3995.
16. Martel, R.; Schmidt, T.; Shea, H. R.; Hertel, T.; Avouris, P. Single- and multi-wall carbon nanotube field-effect transistors. Appl. Phys. Lett. 1998, 73, 2447-2449.
17. Fan, Z. Y.; Wang, D. W.; Chang, P. C.; Tseng, W. Y.; Lu, J. G. ZnO nanowire field-effect transistor and oxygen sensing property. Appl. Phys. Lett. 2004, 85, 5923-5925.
18. Bao, J.; Shalish, I.; Su, Z.; Gurwitz, R.; Capasso, F.; Wang, X.; Ren, Z. Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires. Nanoscale Res. Lett. 2011, 6, 404.
19. Chang, P. C.; Lu, J. G. Temperature dependent conduction and UV induced metal-to-insulator transition in ZnO nanowires. Appl. Phys. Lett. 2008, 92, 212113.
20. Chiu, S. P.; Lin, Y. H.; Lin, J. J. Electrical conduction mechanisms in natively doped ZnO nanowires. Nanotechnology2009, 20, 015203.
21. Look, D. C.; Hemsky, J. W.; Sizelove, J. R. Residual native shallow donor in ZnO. Phys. Rev. Lett. 1999, 82, 2552-2555.
22. Seghier, D.; Gislason, H. P. Characterization of donor states in ZnO. Physica B2007, 401, 404-407.
23. Liao, Z. M.; Lu, Y.; Xu, J.; Zhang, J. M.; Yu, D. P. Temperature dependence of photoconductivity and persistent photoconductivity of single ZnO nanowires. Appl. Phys. A-Mater. 2009, 95, 363-366.
24. Nayak, J.; Kasuya, J.; Watanabe, A.; Nozaki, S. Persistent photoconductivity in ZnO nanorods deposited on electro-deposited seed layers of ZnO. J. Phys.-Condensed Matt. 2008, 20, 195222.
25. Ahn, S. E.; Ji, H. J.; Kim, K.; Kim, G. T.; Bae, C. H.; Park, S. M.; Kim, Y. K.; Ha, J. S. Origin of the slow photoresponse in an individual sol-gel synthesized ZnO nanowire. Appl. Phys. Lett. 2007, 90, 153106.
26. Leiter, F. H.; Alves, H. R.; Hofstaetter, A.; Hofmann, D. M.; Meyer, B. K. The oxygen vacancy as the origin of a green emission in undoped ZnO. Phys. Status Solidi B2001, 226, R4-R5.
27. van Dijken, A.; Meulenkamp, E. A.; Vanmaekelbergh, D.; Meijerink, A. The kinetics of the radiative and nonradiative processes in nanocrystalline ZnO particles upon photo-excitation. J. Phys. Chem. B2000, 104, 1715-1723.
28. Stichtenoth, D.; Ronning, C.; Niermann, T.; Wischmeier, L.; Voss, T.; Chien, C. J.; Chang, P. C.; Lu, J. G. Optical size effects in ultrathin ZnO nanowires. Nanotechnology2007, 18, 435701.
29. Zhang, B. P.; Binh, N. T.; Segawa, Y.; Wakatsuki, K.; Usami, N. Optical properties of ZnO rods formed by metalorganic chemical vapor deposition. Appl. Phys. Lett. 2003, 83, 1635-1637.
30. Yamamoto, A.; Satake, Y.; Atsuta, S.; Taguchi, Y.; Ishizumi, A. The origins of photoluminescence peaks in ZnO nanocrystals revealed by microscopic photoluminescence imaging spectroscopy. J. Phys. Soc. Jpn. 2010, 79, 054701.
31. Meyer, B. K.; Alves, H.; Hofmann, D. M.; Kriegseis, W.; Forster, D.; Bertram, F.; Christen, J.; Hoffmann, A.; Strassburg, M.; Dworzak, M.; Haboeck, U.; Rodina, A. V. Bound exciton and donor-acceptor pair recombinations in ZnO. Phys. Status Solidi B2004, 241, 231-260.
32. Chang, P. C.; Chien, C. J.; Stichtenoth, D.; Ronning, C.; Lu, J. G. Finite size effect in ZnO nanowires. Appl. Phys. Lett. 2007, 90, 113101.
33. Johnston, K.; Henry, M. O.; McCabe, D.; McGlynn, E.; Dietrich, M.; Alves, E.; Xia, M. Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques. Phys. Rev. B2006, 73, 165212.
34. Ko, H. J.; Chen, Y. F.; Hong, S. K.; Wenisch, H.; Yao, T.; Look, D. C. Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. Appl. Phys. Lett. 2000, 77, 3761-3763.